SLPS587 Data sheet

SLPS587A March 2016 – June 2025 CSD19505KTT

PRODUCTION DATA

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	80			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 64V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	2.2	2.6	3.2	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 6V, I_D = 100A		2.9	3.8	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10V, I_D = 100A		2.6	3.1	mΩ
g_fs	Transconductance	V_DS = 8V, I_D = 100A		262		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 40V, ƒ = 1MHz		6090	7920	pF
C_oss	Output capacitance			1600	2080	pF
C_rss	Reverse transfer capacitance			26	34	pF
R_G	Series gate resistance			1.4	2.8	Ω
Q_g	Gate charge total (10V)	V_DS = 40V, I_D = 100A		76		nC
Q_gd	Gate charge gate-to-drain			11		nC
Q_gs	Gate charge gate-to-source			25		nC
Q_g(th)	Gate charge at V_th			15		nC
Q_oss	Output charge	V_DS = 40V, V_GS = 0V		214		nC
t_d(on)	Turn on delay time	V_DS = 40V, V_GS = 10V, I_DS = 100A, R_G = 0Ω		11		ns
t_r	Rise time			5		ns
t_d(off)	Turn off delay time			22		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 100A, V_GS = 0V		0.9	1.1	V
Q_rr	Reverse recovery charge	V_DS= 40V, I_F = 100A, di/dt = 300A/μs		400		nC
t_rr	Reverse recovery time	V_DS= 40V, I_F = 100A, di/dt = 300A/μs		88		ns