SLPS588A March   2016  – June 2025 CSD18536KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD18536KTT Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD18536KTT Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD18536KTT Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD18536KTT Gate Charge
VDS = 50VID = 100A
Figure 4-4 Gate Charge
CSD18536KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD18536KTT Normalized On-State Resistance vs Temperature
ID = 100A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD18536KTT Maximum Safe Operating Area
Single Pulse Max RθJC = 0.4°C/W
Figure 4-10 Maximum Safe Operating Area
CSD18536KTT Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD18536KTT Capacitance
Figure 4-5 Capacitance
CSD18536KTT On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD18536KTT Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD18536KTT Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching