SLPS588A March   2016  – June 2025 CSD18536KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 60V, 1.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18536KTT
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10V) 108 nC
Qgd Gate Charge Gate-to-Drain 14 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5V 1.7 mΩ
VGS = 10V 1.3 mΩ
VGS(th) Threshold Voltage 1.8 V
Ordering Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD18536KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD18536KTTT 50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 349 A
Continuous Drain Current (Silicon limited), TC = 100°C 247 A
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg		 Operating Junction and
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 128A, L = 0.1mH, RG = 25Ω		 819 mJ
(1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD18536KTT RDS(on) vs VGS RDS(on) vs VGS
CSD18536KTT Gate Charge Gate Charge