SLPS638C November   2016  – June 2024 CSD18510KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 40V, 1.4mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18510KTT
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10V) 119 nC
Qgd Gate Charge Gate-to-Drain 21 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5V 2.0 mΩ
VGS = 10V 1.4
VGS(th) Threshold Voltage 1.7 V
Device Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD18510KTT50013-Inch ReelD2PAK
Plastic Package		Tape and Reel
CSD18510KTTT50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage40V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package Limited)200A
Continuous Drain Current (Silicon Limited), TC = 25°C274
Continuous Drain Current (Silicon Limited), TC = 100°C193
IDMPulsed Drain Current(1)400A
PDPower Dissipation250W
TJ,
Tstg		Operating Junction,
Storage Temperature		–55 to 175°C
EASAvalanche Energy, Single Pulse
ID = 81A, L = 0.1mH, RG = 25Ω		328mJ
(1) Max RθJC = 0.6°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
CSD18510KTT RDS(on) vs VGS RDS(on) vs VGS
CSD18510KTT Gate Charge Gate Charge