CELL VOLTAGE CALIBRATION

Apply 2.5V to all cells.

This step will also enable the FETs to calibrate Top-of-Stack, PACK, and LD voltages.

Press enter when voltage is applied...

FET Status =  0x30
Apply 4.20V to all cells. Press enter when voltage is applied...

Cell  1  Gain =  12170
Cell  2  Gain =  12122
Cell  3  Gain =  12142
Cell  4  Gain =  12141
Cell  5  Gain =  12125
Cell  6  Gain =  12143
Cell  7  Gain =  12114
Cell  8  Gain =  12138
Cell  9  Gain =  12110
Cell  10  Gain =  12118
Cell Offset =  0
TOS Gain =  33977
PACK Gain =  34783
LD Gain =  33598
Current Calibration

Apply 0mA through sense resistor for Board Offset Calibration.

Press enter when current is applied...

Board Offset =  -64
Apply 1A (discharge current) through sense resistor for Board Offset Calibration.

Press enter when current is applied...

CC_Counts_A =  -130
Apply 2A (discharge current) through sense resistor for Board Offset Calibration.

Press enter when current is applied...

CC_Counts_B =  -258
0x40fa0000
CC_Gain =  7.8125
0x4a0e38e3
Capacity Gain =  0x4a0e38e3
Temperature Calibration

Set the device temperature to 25C.(~298.1K)
This example will calibrate TS1 and the Internal Temperature.

Press enter when temperature is applied...

Internal Temp Offset =  65534
TS1 Offset =  65509
COV Calibration

Apply the desired value for the cell over-voltage threshold to device cell inputs.

Calibration will use the voltage applied to the top cell of the device.

For example, Apply 4350mV

Press enter when voltage is applied...

CUV Calibration

Apply the desired value for the cell under-voltage threshold to device cell inputs.

Calibration will use the voltage applied to the top cell of the device.

For example, Apply 2400mV

Press enter when voltage is applied...

Writing Calibration to Data RAM

End of calibration