SLUSAT7H
November 2011 – September 2025
UCC27211
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
5.7
Timing Diagrams
5.8
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Input Stages
6.3.2
Undervoltage Lockout (UVLO)
6.3.3
Level Shift
6.3.4
Boot Diode
6.3.5
Output Stages
6.4
Device Functional Modes
7
Application and Implementation
7.1
Application Information
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.2.1
Input Threshold Type
7.2.2.2
VDD Bias Supply Voltage
7.2.2.3
Peak Source and Sink Currents
7.2.2.4
Propagation Delay
7.2.2.5
Power Dissipation
7.2.3
Application Curves
7.3
Power Supply Recommendations
7.4
Layout
7.4.1
Layout Guidelines
7.4.2
Layout Example
7.4.3
Thermal Considerations
8
Device and Documentation Support
8.1
Third-Party Products Disclaimer
8.2
Documentation Support
8.2.1
Related Documentation
8.3
Receiving Notification of Documentation Updates
8.4
Support Resources
8.5
Trademarks
8.6
Electrostatic Discharge Caution
8.7
Glossary
9
Revision History
10
Mechanical, Packaging, and Orderable Information
1
Features
Drives two N-channel MOSFETs in high-side and low-side configuration with independent inputs
Maximum boot voltage 120V DC
3.7A source, 4.5A sink output currents
Input pins can tolerate –10V to 20V and are independent of supply voltage range
TTL compatible input versions
8V to 17V VDD operating range, (20V absolute maximum)
7.2ns rise and 5.5ns fall time with 1000pF load
Fast propagation delay times (20ns typical)
4ns delay matching
Symmetrical undervoltage lockout for high-side and low-side driver
All industry standard packages available (SOIC-8,
PowerPAD™
SOIC-8, 4mm × 4mm SON-8 and 4mm × 4mm SON-10)
Specified from –40°C to 150°C