The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET
drivers, but offer several significant performance improvements. Peak output pull-up and pull-down
current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have
been reduced to 0.9 Ω, thereby allowing for driving large power MOSFETs with minimized switching
losses during the transition through the Miller Plateau of the MOSFET. The input structure is now
able to directly handle 10 VDC, which increases robustness and also allows direct interface to
gate-drive transformers without using rectification diodes. The inputs are also independent of
supply voltage and have a maximum rating of 20-V.
The switching node (HS pin) of the UCC2721x can handle 18 V maximum which allows the
high-side channel to be protected from inherent negative voltages caused parasitic inductance and
stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased
hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise
The low-side and high-side gate drivers are independently controlled and matched to 2 ns
between the turnon and turnoff of each other.
An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes.
Undervoltage lockout is provided for both the high-side and the low-side drivers providing
symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the
Both devices are offered in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8
(DRM) and SON-10 (DPR) packages.