SLUSDO2D June   2020  – August 2024 UCC21540-Q1 , UCC21540A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics
    10. 6.10 Insulation Characteristics Curves
    11. 6.11 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Minimum Pulses
    2. 7.2 Propagation Delay and Pulse Width Distortion
    3. 7.3 Rising and Falling Time
    4. 7.4 Input and Disable Response Time
    5. 7.5 Programmable Dead Time
    6. 7.6 Power-Up UVLO Delay to OUTPUT
    7. 7.7 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in the UCC21540-Q1
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
      2. 8.4.2 Programmable Dead Time (DT) Pin
        1. 8.4.2.1 DT Pin Tied to VCCI
        2. 8.4.2.2 Connecting a Programming Resistor between DT and GND Pins
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select Dead Time Resistor and Capacitor
        3. 9.2.2.3 Select External Bootstrap Diode and Its Series Resistor
        4. 9.2.2.4 Gate Driver Output Resistor
        5. 9.2.2.5 Gate to Source Resistor Selection
        6. 9.2.2.6 Estimating Gate Driver Power Loss
        7. 9.2.2.7 Estimating Junction Temperature
        8. 9.2.2.8 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.8.1 Selecting a VCCI Capacitor
          2. 9.2.2.8.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.8.3 Select a VDDB Capacitor
        9. 9.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Component Placement Considerations
      2. 11.1.2 Grounding Considerations
      3. 11.1.3 High-Voltage Considerations
      4. 11.1.4 Thermal Considerations
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Support Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

6.7 Safety-Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETERTEST CONDITIONSSIDEMINTYPMAXUNIT
ISSafety output supply currentθJA = 74.1°C/W, VVDDA/B = 12 V, TJ = 150°C, TA = 25°C
See Figure 6-2 		DRIVER A, DRIVER B66mA
PSSafety supply powerθJA = 74.1°C/W, VVCCI = 5.5 V, TJ = 150°C, TA = 25°C
See Figure 6-3 		INPUT50mW
DRIVER A800
DRIVER B800
TOTAL1650
TSSafety temperature (1)150°C
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA.
 
The junction-to-air thermal resistance, RθJA, in the Section 6.4 table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter:
 
TJ = TA + RθJA × P, where P is the power dissipated in the device.
 
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum allowed junction temperature.
 
PS = IS × VI, where VI is the maximum input voltage.