UCC21540-Q1

• Junction temperature range –40°C to 150°C
• Up to 4-A peak source and 6-A peak sink output
• Up to 18-V VDD output drive supply
• CMTI greater than 100 V/ns
• Switching parameters:
  • 40-ns maximum propagation delay
  • 5-ns maximum delay matching
  • 5.5-ns maximum pulse-width distortion
  • 35-µs maximum VDD power-up delay
• AEC Q100 qualified with:
  • Device temperature grade 1
  • Device HBM ESD classification level H2
  • Device CDM ESD classification level C6
• Safety-related certifications:
  • 8000-V_PK reinforced isolation per DIN V VDE V 0884-11:2017-01
  • 5700-V_RMS isolation for 1 minute per UL 1577
  • CQC certification per GB4943.1-2011 (Planned)

All trademarks are the property of their respective owners.

The UCC21540-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4-A peak-source and 6-A peak-sink current to drive power MOSFET, IGBT, and GaN transistors.

The can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kV_RMS isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, integrated de-glitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to –2V spikes for 200ns on input and output pins. All supplies have UVLO protection.