The TPS7H1111-SP HDR exposure was performed on biased and unbiased devices in a Co-60 gamma cell at Texas Instruments in Dallas, Texas. The dose rate for exposure was 194.5 rad(Si) / s. After exposure up to the target dose rate, the devices were electrically tested at Texas Instruments. ATE test limits are set per SMD electrical limits based on qualification and characterization data. As listed in Table 1-1 the 100krad(Si) biased and unbiased devices were annealed with the respective biased and unbiased conditions for one week. The effective dose rate for these devices was 165 mrad(Si) / s.