SLVS719H June   2008  – June 2026 TL1963A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: TL1963A (for DCQ, KTT package)
    6. 5.6 Electrical Characteristics: TL1963A (for DCY Package)
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 SHDN
      2. 6.3.2 Dropout Voltage
      3. 6.3.3 Undervoltage Lockout
      4. 6.3.4 Thermal Shutdown
      5. 6.3.5 Current Limit
      6. 6.3.6 Overload Recovery
      7. 6.3.7 Output Voltage Noise
      8. 6.3.8 Protection Features
        1. 6.3.8.1 For Legacy Chip Only
        2. 6.3.8.2 For Both Legacy and New Chip
    4. 6.4 Device Functional Modes
      1. 6.4.1 Device Functional Mode Comparison
      2. 6.4.2 Normal Operation
      3. 6.4.3 Dropout Operation
      4. 6.4.4 Disabled
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Input/Output Capacitance and Transient Response
      2. 7.1.2 Reverse Current
      3. 7.1.3 Feed-Forward Capacitor
      4. 7.1.4 Estimating Junction Temperature
      5. 7.1.5 Power Dissipation (PD)
    2. 7.2 Typical Applications
      1. 7.2.1 Kelvin Sense Connection with SENSE pin
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curve
      5. 7.2.5 Paralleling Regulators for Higher Output Current (Legacy chip only)
        1. 7.2.5.1 Design Requirements
        2. 7.2.5.2 Detailed Design Procedure (Legacy chip only)
        3. 7.2.5.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
      3. 7.4.3 Thermal Considerations
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.4 Thermal Shutdown

The device contains a thermal shutdown protection circuit to disable the device when the junction temperature (TJ) of the pass transistor rises to TSD+ (typical). Thermal shutdown hysteresis verifies that the device resets (turns on) when the temperature falls to TSD- (typical).

The thermal time-constant of the semiconductor die is fairly short, thus the device can cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before startup completes.

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed the operational specifications. Although the design of the internal protection circuitry protects against thermal overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.