SLVSBA2 Data sheet

SLVSBA2E July 2012 – July 2025 DRV8844

PRODUCTION DATA

5.5 Electrical Characteristics

T_A = 25°C, over operating free-air temperature range, all voltages relative to VNEG terminal (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLIES
I_VM	VM operating supply current	V_M = 24 V, f_PWM < 50 kHz		1	5	mA
I_VMQ	VM sleep mode supply current	V_M = 24 V		500	800	μA
V_UVLO	VM undervoltage lockout voltage	V_M rising		6.3	8	V
V3P3OUT REGULATOR
V_3P3	V3P3OUT voltage	IOUT = 0 to 1 mA	3.18	3.3	3.52	V
LOGIC-LEVEL INPUTS
V_IL	Input low voltage			LGND + 0.6	LGND + 0.7	V
V_IH	Input high voltage		LGND + 2.2		LGND + 5.25	V
V_HYS	Input hysteresis		50		600	mV
I_IL	Input low current	VIN = LGND	–5		5	μA
I_IH	Input high current	VIN = LGND + 3.3 V			100	μA
R_PD	Internal pulldown resistance			100		kΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
V_OL	Output low voltage	I_O = 5 mA			LGND + 0.5	V
I_OH	Output high leakage current	V_O = LGND + 3.3 V			1	μA
H-BRIDGE FETS
R_DS(ON)	HS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 25°C		0.24		Ω
	HS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 85°C		0.29	0.39
	LS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 25°C		0.24
	LS FET on resistance	V_M = 24 V, I_O = 1 A, T_J = 85°C		0.29	0.39
I_OFF	Off-state leakage current		–2		2	μA
PROTECTION CIRCUITS
I_OCP	Overcurrent protection trip level		3			A
t_DEAD	Output dead time			90		ns
t_OCP	Overcurrent protection deglitch time			5		µs
T_TSD	Thermal shutdown temperature	Die temperature	150	160	180	°C