SLVSBJ0F August   2012  – August 2016 TPS22965

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics—VBIAS = 5 V
    6. 7.6 Electrical Characteristics—VBIAS = 2.5 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical DC Characteristics
    9. 7.9 Typical Switching Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Adjustable Rise Time
      2. 9.3.2 Quick Output Discharge (QOD) (Optional)
      3. 9.3.3 Low Power Consumption During Off State
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 ON and OFF Control
      2. 10.1.2 Input Capacitor (Optional)
      3. 10.1.3 Output Capacitor (Optional)
      4. 10.1.4 VIN and VBIAS Voltage Range
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
        2. 10.2.2.2 Thermal Considerations
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1) (2)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VBIAS Bias voltage –0.3 6 V
VON On voltage –0.3 6 V
IMAX Maximum continuous switch current 6 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 8 A
TJ Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage 0.8 VBIAS V
VBIAS Bias voltage 2.5 5.7 V
VON ON voltage 0 5.7 V
VOUT Output voltage VIN V
VIH High-level input voltage, ON VBIAS = 2.5 V to 5.7 V 1.1 5.7 V
VIL Low-level input voltage, ON VBIAS = 2.5 V to 5.7 V 0 0.5 V
CIN Input capacitor 1(1) µF
TA Operating free-air temperature(2) –40 105 °C
(1) See the Application Information section.
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the equation: TA (max) = TJ(max) – (θJA × PD(max))

7.4 Thermal Information

THERMAL METRIC(1) TPS22965x UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 72.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 96.1 °C/W
RθJB Junction-to-board thermal resistance 42.1 °C/W
ψJT Junction-to-top characterization parameter 3.3 °C/W
ψJB Junction-to-board characterization parameter 42.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 13.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specification in the following table applies where VBIAS = 5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ VVBIAS VBIAS quiescent current IOUT = 0 mA,
VIN = VON = VBIAS = 5 V		 –40°C to +105°C 50 75 µA
ISD VBIAS VBIAS shutdown current VON = GND, VOUT = 0 V –40°C to +105°C 2 µA
ISD VIN VIN off-state supply current VON = GND,
VOUT = 0 V		 VIN = 5 V –40°C to +105°C 0.005 5 µA
VIN = 3.3 V –40°C to +105°C 0.002 3
VIN = 1.8 V –40°C to +105°C 0.002 2
VIN = 0.8 V –40°C to +105°C 0.001 1
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 0.5 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA,
VBIAS = 5 V		 VIN = 5 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 3.3 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.8 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.5 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.2 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 0.8 V 25°C 16 21 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
RPD (1) Output pulldown resistance VIN = 5 V, VON = 0 V, IOUT = 15 mA –40°C to +105°C 225 300 Ω
(1) TPS22965 only

7.6 Electrical Characteristics—VBIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies where VBIAS = 2.5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ VVBIAS VBIAS quiescent current IOUT = 0 mA,
VIN = VON = VBIAS = 2.5 V		 –40°C to +105°C 20 30 µA
ISD VBIAS VBIAS shutdown current VON = GND, VOUT = 0 V –40°C to +105°C 2 µA
ISD VIN VIN off-state supply current VON = GND,
VOUT = 0 V		 VIN = 2.5 V –40°C to +105°C 0.005 3 µA
VIN = 1.8 V –40°C to +105°C 0.002 2
VIN = 1.2 V –40°C to +105°C 0.002 2
VIN = 0.8 V –40°C to +105°C 0.001 1
ION ON pin input leakage current VON = 5.5 V –40°C to +105°C 0.5 µA
RESISTANCE CHARACTERISTICS
RON ON-state resistance IOUT = –200 mA,
VBIAS = 2.5 V		 VIN = 2.5 V 25°C 20 24 mΩ
–40°C to +85°C 27
–40°C to +105°C 28
VIN = 1.8 V 25°C 19 23 mΩ
–40°C to +85°C 26
–40°C to +105°C 28
VIN = 1.5 V 25°C 18 23 mΩ
–40°C to +85°C 25
–40°C to +105°C 27
VIN = 1.2 V 25°C 0 18 23 mΩ
–40°C to +85°C 25
–40°C to +105°C 27
VIN = 0.8 V 25°C 17 22 mΩ
–40°C to +85°C 25
–40°C to +105°C 27
RPD(1) Output pulldown resistance VIN = 2.5 V, VON = 0 V, IOUT = 1 mA –40°C to +105°C 275 325 Ω
(1) TPS22965 only

7.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1600 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 9
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1985
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 3
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 660
VIN = 0.8 V, VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 730 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 100
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 380
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 8
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 560
VIN = 2.5 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2435 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 9
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 2515
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 4
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1230
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1565 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 70
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 930
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 8
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CT = 1000 pF 1110

7.8 Typical DC Characteristics

TPS22965 D001_SLVSBJ0.gif
VIN = 1.8 V VON = 5 V VOUT = 0 V
Figure 1. VBIAS Quiescent Current vs Bias Voltage
TPS22965 D003_SLVSBJ0.gif
VIN = 5 V VON = 0 V VOUT = 0 V
Figure 3. VBIAS Shutdown Current vs Bias Voltage
TPS22965 D005_SLVSBJ0.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5.5 V
All three RON curves have the same values and hence only one line is visible.
Figure 5. On-Resistance vs Ambient Temperature
TPS22965 D007_SLVSBJ0.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5.5 V
Figure 7. On-Resistance vs Input Voltage
TPS22965 C010_SLVSCI3.png
TA = 25°C IOUT = –200 mA VON = 5.5 V
Figure 9. On-Resistance vs Bias Voltage
TPS22965 C012_SLVSCI3.png
VIN = 2 V TA = 25°C
Figure 11. Output Voltage vs ON Voltage
TPS22965 C025_SLVSCI3.png
VBIAS = 5 V IOUT = –4 A VON = 5.5 V
Figure 13. On-Resistance vs Input Voltage
TPS22965 D002_SLVSBJ0.gif
VBIAS = 5 V VON = 5 V VOUT = 0 V
Figure 2. VBIAS Quiescent Current vs Input Voltage
TPS22965 D004_SLVSBJ0.gif
VBIAS = 5 V VON = 0 V VOUT = 0 V
Figure 4. VBIAS Shutdown Current vs Input Voltage
TPS22965 D006_SLVSBJ0.gif
VBIAS = 5 V IOUT = –200 mA VON = 5.5 V
Note: All three RON curves have the same values; therefore, only one line is visible.
Figure 6. On-Resistance vs Ambient Temperature
TPS22965 D008_SLVSBJ0.gif
VBIAS = 5 V IOUT = –200 mA VON = 5.5 V
Figure 8. On-Resistance vs Input Voltage
TPS22965 D010_SLVSBJ0.gif
VIN = 1.8 V VON = 0 V
Figure 10. Pulldown Resistance vs Bias Voltage
TPS22965 C024_SLVSCI3.png
VBIAS = 2.5 V IOUT = –4 A VON = 5.5 V
Figure 12. On-Resistance vs Input Voltage

7.9 Typical Switching Characteristics

TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
TPS22965 C013_SLVSCI3.png
VBIAS = 2.5 V CT = 1000 pF
Figure 14. Delay Time vs Input Voltage
TPS22965 C015_SLVSCI3.png
VBIAS = 2.5 V CT = 1000 pF
Figure 16. Fall Time vs Input Voltage
TPS22965 C017_SLVSCI3.png
VBIAS = 2.5 V CT = 1000 pF
Figure 18. Turnoff Time vs Input Voltage
TPS22965 C019_SLVSCI3.png
VBIAS = 2.5 V CT = 1000 pF
Figure 20. Turnon Time vs Input Voltage
TPS22965 C021_SLVSCI3.png
VBIAS = 2.5 V CT = 1000 pF
Figure 22. Rise Time vs Input Voltage
TPS22965 sc001_lvsbj0.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 24. Turnon Response Time
TPS22965 sc003_lvsbj0.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF,
CL = 0.1 µF RL = 10 Ω
Figure 26. Turnon Response Time
TPS22965 sc005_lvsbj0.png
VIN = 0.8 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 28. Turnoff Response Time
TPS22965 sc007_lvsbj0.png
VIN = 2.5 V VBIAS = 2.5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 30. Turnoff Response Time
TPS22965 C014_SLVSCI3.png
VBIAS = 5 V CT = 1000 pF
Figure 15. Delay Time vs Input Voltage
TPS22965 C016_SLVSCI3.png
VBIAS = 5 V CT = 1000 pF
Figure 17. Fall Time vs Input Voltage
TPS22965 C018_SLVSCI3.png
VBIAS = 5 V CT = 1000 pF
Figure 19. Turnoff Time vs Input Voltage
TPS22965 C020_SLVSCI3.png
VBIAS = 5 V CT = 1000 pF
Figure 21. Turnon Time vs Input Voltage
TPS22965 C022_SLVSCI3.png
VBIAS = 5 V CT = 1000 pF
Figure 23. Rise Time vs Input Voltage
TPS22965 sc002_lvsbj0.png
VIN = 0.8 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 25. Turnon Response Time
TPS22965 tst_lvsbj0.png
VIN = 5 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 27. Turnon Response Time
TPS22965 sc006_lvsbj0.png
VIN = 0.8 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω
Figure 29. Turnoff Response Time
TPS22965 sc008_lvsbj0.png
VIN = 5 V VBIAS = 5 V CIN = 1 µF
CL = 0.1 µF RL = 10 Ω)
Figure 31. Turnoff Response Time