SLVSBR3A May 2013 – June 2015 TPS61158
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Voltage range(2) | VIN | –0.3 | 6 | V |
| VOUT, LX | –0.3 | 30 | V | |
| FB, CTRL | –0.3 | 7 | V | |
| Continuous power dissipation | ||||
| Operating junction temperature | –40 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C | |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage | 2.7 | 5.5 | V | |
| VOUT | Output voltage | VIN | 29 | V | |
| IOUT | Output load current | 30 | mA | ||
| L | Inductor | 10 | 22 | µH | |
| CI | Input capacitor | 1 | 10 | µF | |
| CO | Output capacitor | 0.47 | 2.2 | µF | |
| FPWM | Input PWM signal frequency | 20 | 100 | kHz | |
| TA | Operating ambient temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 125 | °C | |
| THERMAL METRIC(1) | TPS61158 | UNIT | |
|---|---|---|---|
| DRV (WSON) | |||
| 6 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 70.4 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 94.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 39.8 | °C/W |
| ψJT | Junction-to-top characterization parameter | 2.5 | °C/W |
| ψJB | Junction-to-board characterization parameter | 40.2 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 10.2 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| POWER SUPPLY | ||||||
| VIN | Input voltage range | 2.7 | 5.5 | V | ||
| VIN_UVLO | VIN undervoltage lockout threshold | VIN ramp down | 2.2 | 2.35 | V | |
| VIN ramp up | 2.5 | 2.65 | ||||
| VIN_HYS | VIN undervoltage lockout hysteresis | 275 | mV | |||
| IQ | Operating quiescent current into VIN | Device enable, no switching and no load (VFB = 0.4 V) | 0.3 | 0.5 | mA | |
| Device enable, switching 750 kHz and no load (VFB = 0 V) |
0.5 | 1.65 | ||||
| ISD | Shutdown current | CTRL = GND | 0.1 | 1 | µA | |
| CONTROL LOGIC AND TIMING | ||||||
| VH | CTRL logic high voltage | 1.2 | V | |||
| VL | CTRL logic Low voltage | 0.4 | V | |||
| RPD | CTRL pin internal pull-down resistor | VCTRL = 1.8 V | 300 | kΩ | ||
| tSD | CTRL pulse width to shutdown | CTRL from high to low | 3.5 | ms | ||
| VOLTAGE AND CURRENT REGULATION | ||||||
| VREF | Voltage feedback regulation voltage | Duty = 100% | 194 | 200 | 206 | mV |
| IFB | FB pin bias current | VFB = 200 mV | 2 | µA | ||
| tREF | VREF filter time constant | 230 | µs | |||
| POWER SWITCH AND DIODE | ||||||
| RDS(ON) | N-channel MOSFET on-resistance | VIN = 3.6 V, TA = 25°C, IOUT = 100 mA |
0.6 | 1 | Ω | |
| VF | Power diode forward voltage | IDIODE = 0.2 A | 0.75 | 1 | V | |
| ILEAK_LX | LX pin leakage current | VLX = 28 V | 0.1 | 2 | µA | |
| OSCILLATOR | ||||||
| ƒSW | Oscillator frequency | 600 | 750 | 900 | kHz | |
| Dmax | Maximum duty cycle of boost switching | VFB = 0 V, measured on the drive signal of the switch MOSFET | 88% | 94% | ||
| PROTECTION AND SOFT START | ||||||
| ILIM | NMOS current limit | VIN = 3.6 V, D = DMAX
TA = 0°C to 85°C |
0.5 | 0.6 | 0.7 | A |
| ILIM_Start | Start up current limit | 360 | mA | |||
| tILIM_Start | Time step for start up current limit | 8 | ms | |||
| VOVP | Open LED protection threshold | Tested at VOUT pin | 27.5 | 28.2 | 29 | V |
| VACKNL | Acknowledge output voltage low | Open drain, Rpullup = 15 kΩ to VIN | 0.4 | V | ||
| THERMAL SHUTDOWN | ||||||
| Tshutdown | Thermal shutdown threshold | 160 | °C | |||
| Thys | Thermal shutdown hysteresis | 15 | °C | |||
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| tes_detect | EasyScale detection time(1), CTRL low | 450 | µs | ||
| tes_delay | EasyScale detection delay | 100 | µs | ||
| tes_win | EasyScale detection window time, measured from CTRL high | 3.5 | ms | ||
| tstart | Start time of program stream | 3.5 | µs | ||
| tEOS | End time of program stream | 3.5 | 600 | µs | |
| tH_LB | High time of low bit, Logic 0 | 3.5 | 300 | µs | |
| tL_LB | Low time of low bit, Logic 0 | 2 × tH_LB | 600 | µs | |
| tH_HB | High time of high bit, Logic 1 | 2 × tL_HB | 600 | µs | |
| tL_HB | Low time of high bit, Logic 1 | 3.5 | 300 | µs | |
| tvalACK | Acknowledge valid time (see(2)) | 3.5 | µs | ||
| tACKN | Duration of acknowledge condition (see(2)) | 900 | µs | ||






