Verify that the high
current-carrying power-path connections are as short as possible and are sized
to carry at least twice the full-load current.
Tie the GND (PowerPAD) pin to the
PCB ground plane at the terminal of the IC with the shortest possible trace. The
PCB ground must be a copper plane or island on the board. TI recommends to have
a separate ground plane island for the eFuse. This plane does not carry any high
currents and serves as a quiet ground reference for all the critical analog
signals of the eFuse. Connect the device ground plane to the system power ground
plane using a star connection.
The best placement of the
decoupling capacitor (CIN) is closest to the IN and GND pins of the
device. Take care to minimize the loop area that the bypass-capacitor
connection, the IN pin, and the GND pin of the IC form.
Locate the following support
components close to the connection pins:
RILM or
RPLM
RIOCP
CDLY
CdVdT
Resistors for OVP
Connect the other end of the
component to the GND pin of the device with shortest trace length. The trace
routing for these components to the device must be as short as possible to
reduce parasitic effects on the current limit, overcurrent blanking interval,
and soft-start timing.
Because the bias current on ILM pin directly controls the overcurrent protection
behavior of the device, the PCB routing of this node must be kept away from any
noisy (switching) signals.
Physically place protection
devices such as TVS, snubbers, capacitors, or diodes close to the device the
protection device is intended to protect. Route these protection devices with
short traces to reduce inductance. For example, TI recommends a protection
Schottky diode to address negative transients due to switching of inductive
loads. TI recommends to add a ceramic decoupling capacitor (COUT) of
1μF or greater between OUT and GND. These components must be physically close to
the OUT pins. Take care to minimize the loop area that the Schottky diode and
bypass-capacitor connection, the OUT pin, and the GND pin of the IC form.