SLVSHL6C
June 2025 – June 2026
TPSI2260-Q1
PRODUCTION DATA
1
1
Features
2
Applications
3
Description
4
Device Comparison Table
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Power Ratings
6.6
Insulation Specifications
6.7
Safety-Related Certifications
6.8
Safety Limiting Values
6.9
Electrical Characteristics
6.10
Switching Characteristics
6.11
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Avalanche Robustness
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.1.1
TI Reference Designs
9.2
Typical Application
9.2.1
Insulation Resistance Monitoring
9.2.2
Battery V- Reference Example
9.2.3
Chassis Ground Reference Example
9.2.4
Dielectric Withstand Testing (HiPot)
9.2.5
Design Requirements
9.2.6
Detailed Design Procedure - Chassis Ground Reference
9.2.6.1
RISO1 Selection
9.2.7
Application Performance Plot
9.3
Power Supply Recommendations
9.4
Layout
9.4.1
Layout Guidelines
9.4.1.1
Component Placement
9.4.1.2
EMI Considerations
9.4.1.3
ESD Considerations
9.4.1.4
High-Voltage Considerations
9.4.2
Layout Example
10
Device and Documentation Support
10.1
Third-Party Products Disclaimer
10.2
Receiving Notification of Documentation Updates
10.3
Support Resources
10.4
Trademarks
10.5
Electrostatic Discharge Caution
10.6
Glossary
11
Revision History
12
Mechanical, Packaging, and Orderable Information
1
Features
Qualified for automotive applications
AEC-Q100 grade 1: –40 to 125°C T
A
Low EMI
Meets CISPR25 class 5 performance with no additional components
Integrated avalanche rated MOSFETs
Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
TPSI2260-Q1: I
AVA
=
1mA for 60s pulses
TPSI2260C-Q1: I
AVA
=
0.6mA for 60s pulses
TPSI2260T-Q1: I
AVA
=
3mA for 60s pulses
600V
standoff voltage
R
ON
=
65
Ω (T
J
= 25°C)
I
OFF
= 1.22μA at
500V
(T
J
= 105°C)
Low primary side supply current
5mA ON state current
3.5μA OFF state current (T
J
= 25°C)
Functional Safety Capable
Documentation available
to aid in ISO 26262 and IEC 61508 system design
Robust isolation barrier:
> 30 year projected lifetime at 1500V
RMS
/ 2120
DC
working voltage
Reinforced isolation rating, V
ISO
, up to 5000V
RMS
SOIC 11-pin (DWQ) package
with wide pins for improved thermal performance
Creepage and clearance ≥ 8mm (primary-secondary)
Creepage and clearance ≥
6
mm (across switch terminals)
Safety-Related Certifications
(Planned) DIN EN IEC 60747-17 (VDE 0884-17)
(Planned) UL 1577 component recognition program