SLVSHL6C June   2025  – June 2026 TPSI2260-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Avalanche Robustness
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 TI Reference Designs
    2. 9.2 Typical Application
      1. 9.2.1 Insulation Resistance Monitoring
      2. 9.2.2 Battery V- Reference Example
      3. 9.2.3 Chassis Ground Reference Example
      4. 9.2.4 Dielectric Withstand Testing (HiPot)
      5. 9.2.5 Design Requirements
      6. 9.2.6 Detailed Design Procedure - Chassis Ground Reference
        1. 9.2.6.1 RISO1 Selection
      7. 9.2.7 Application Performance Plot
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Component Placement
        2. 9.4.1.2 EMI Considerations
        3. 9.4.1.3 ESD Considerations
        4. 9.4.1.4 High-Voltage Considerations
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Features

  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C TA
  • Low EMI
    • Meets CISPR25 class 5 performance with no additional components
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
      • TPSI2260-Q1: IAVA = 1mA for 60s pulses
      • TPSI2260C-Q1: IAVA = 0.6mA for 60s pulses
      • TPSI2260T-Q1: IAVA = 3mA for 60s pulses
    • 600V standoff voltage
    • RON = 65Ω (TJ = 25°C)
    • IOFF = 1.22μA at 500V (TJ = 105°C)
  • Low primary side supply current
    • 5mA ON state current
    • 3.5μA OFF state current (TJ = 25°C)
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
    • Reinforced isolation rating, VISO, up to 5000VRMS
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8mm (primary-secondary)
    • Creepage and clearance ≥ 6mm (across switch terminals)
  • Safety-Related Certifications
    • (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
    • (Planned) UL 1577 component recognition program