SLVSHP8A January   2026  – June 2026 TPS544B28

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Related Products
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  D-CAP4 Control
      2. 7.3.2  Internal VCC LDO and Using External Bias On the VCC Pin
        1. 7.3.2.1 Powering the Device From a Single Bus
        2. 7.3.2.2 Powering the Device From a Split-Rail Configuration
      3. 7.3.3  Multifunction Select (MS1) Pin
      4. 7.3.4  Multifunction Select (MS2) Pin
      5. 7.3.5  PMBus® Address (ADR) Pin
      6. 7.3.6  Output Voltage Setting
        1. 7.3.6.1 Setting VBOOT and VOUT_SCALE_LOOP
        2. 7.3.6.2 Setting Output Voltage (Internal Feedback)
        3. 7.3.6.3 Setting Output Voltage (External Feedback)
      7. 7.3.7  Switching Frequency
      8. 7.3.8  Dynamic Voltage Slew Rate
      9. 7.3.9  Enable
      10. 7.3.10 Soft Start and Soft Stop
      11. 7.3.11 Power Good
      12. 7.3.12 Overvoltage and Undervoltage Protection
      13. 7.3.13 Remote Sense
      14. 7.3.14 Low-side MOSFET Zero-Crossing
      15. 7.3.15 Current Sense and Positive Overcurrent Protection
      16. 7.3.16 Low-side MOSFET Negative Current Limit
      17. 7.3.17 Output Voltage Discharge
      18. 7.3.18 UVLO Protection
      19. 7.3.19 Telemetry
      20. 7.3.20 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Auto-Skip (PFM) Eco-mode Light Load Operation
      2. 7.4.2 Forced Continuous-Conduction Mode
  9. 8 Programming Registers
    1. 8.1 Register Map
      1. 8.1.1  OPERATION (Address = 01h)
      2. 8.1.2  ON_OFF_CONFIG (Address = 02h)
      3. 8.1.3  CLEAR_FAULTS (Address = 03h)
      4. 8.1.4  WRITE_PROTECT (Address = 10h)
      5. 8.1.5  STORE_USER_ALL (Address = 15h)
      6. 8.1.6  RESTORE_USER_ALL (Address = 16h)
      7. 8.1.7  CAPABILITY (Address = 19h)
      8. 8.1.8  VOUT_MODE (Address = 20h)
      9. 8.1.9  VOUT_COMMAND (Address = 21h)
      10.      57
      11. 8.1.10 VOUT_MARGIN_HIGH (Address = 25h)
      12. 8.1.11 VOUT_MARGIN_LOW (Address = 26h)
      13. 8.1.12 VOUT_TRANSITION_RATE (Address = 27h)
      14. 8.1.13 61
      15. 8.1.14 VOUT_SCALE_LOOP (Address = 29h)
      16. 8.1.15 FREQUENCY_SWITCH (Address = 33h)
      17. 8.1.16 64
      18. 8.1.17 VOUT_OV_FAULT_RESPONSE (Address = 41h)
      19. 8.1.18 VOUT_UV_FAULT_RESPONSE (Address = 45h)
      20. 8.1.19 IOUT_OC_FAULT_LIMIT (Address = 46h)
      21.      68
      22. 8.1.20 TON_DELAY (Address = 60h)
      23. 8.1.21 TON_RISE (Address = 61h)
      24.      71
      25. 8.1.22 TOFF_DELAY (Address = 64h)
      26. 8.1.23 TOFF_FALL (Address = 65h)
      27. 8.1.24 STATUS_BYTE (Address = 78h)
      28. 8.1.25 STATUS_WORD (Address = 79h)
      29. 8.1.26 STATUS_CML (Address = 7Eh)
      30. 8.1.27 STATUS_MFR_SPECIFIC (Address = 80h)
      31. 8.1.28 READ_VOUT (Address = 8Bh)
      32. 8.1.29 READ_IOUT (Address = 8Ch)
      33. 8.1.30 READ_TEMP1 (Address = 8Dh)
      34. 8.1.31 PMBUS_REVISION (Address = 98h)
      35. 8.1.32 MFR_ID (Address = 99h)
      36. 8.1.33 MFR_MODEL (Address = 9Ah)
      37. 8.1.34 MFR_REVISION (Address = 9Bh)
      38. 8.1.35 IC_DEVICE_ID (Address = ADh)
      39. 8.1.36 IC_DEVICE_REV (Address = AEh)
      40. 8.1.37 SYS_CFG_USER1 (Address = D1h)
      41. 8.1.38 PASSKEY (Address = D2h)
      42. 8.1.39 COMP (Address = D4h)
      43.      90
      44. 8.1.40 VBOOT (Address = D5h)
      45.      92
      46. 8.1.41 NVM_CHECKSUM (Address = D9h)
      47. 8.1.42 FUSION_ID0 (Address = FCh)
      48. 8.1.43 FUSION_ID1 (Address = FDh)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Setting Point
        2. 9.2.2.2 Choose the Switching Frequency
        3. 9.2.2.3 Choose the Inductor
        4. 9.2.2.4 Choose the Output Capacitor
        5. 9.2.2.5 Choose the Input Capacitors (CIN)
        6. 9.2.2.6 VCC Bypass Capacitor
        7. 9.2.2.7 BOOT Capacitor
        8. 9.2.2.8 PG Pullup Resistor
        9. 9.2.2.9 Choose the PMBus® Address and Fault Recovery Mode
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Thermal Performance On TI EVM
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

7.3.2 Internal VCC LDO and Using External Bias On the VCC Pin

The TPS544B28 has an internal 3.0V LDO featuring input from VIN and output to VCC. When the VIN voltage rises above the UVLO threshold (VINUVLO(R)), the internal LDO is enabled and starts regulating output voltage on the VCC pin. The VCC voltage provides the bias voltage for the internal analog and digital circuitry and also provides the supply voltage for the gate drivers. Bypass the VCC pin with a 1µF, at least 6.3V rating ceramic capacitor to PGND, and keep the VCC-PGND current return loop path to the device as small as possible. TI does not recommend bypassing VCC to AGND. See Section 9.4 for a recommended layout example for the VCC bypass capacitor.

An external bias that is above the output voltage of the internal LDO can override the internal LDO. This override enhances the efficiency of the converter because the VCC current now runs off this external bias instead of the internal linear regulator. An external bias between 3.1V and 4.5V can be used to provide additional efficiency enhancement by reducing the RDSON of the integrated power MOSFETs.

The VCC UVLO circuit monitors the VCC pin voltage and disables the whole converter when VCC falls below the VCC UVLO falling threshold. Maintaining a stable and clean VCC voltage is required for a smooth operation of the device.

Considerations when using an external bias on the VCC pin are as follows:

  • When the external bias is applied on the VCC pin early enough (for example, before EN signal comes in), the internal LDO pass device is always off and the internal analog circuits have a stable power supply rail at the power enable.
  • TI does not recommend this consideration. When the external bias is applied on the VCC pin late (for example, after EN signal comes in), any power-up and power-down sequencing can be applied as long as there is no excess current pulled out of the VCC pin. With this sequence, be cautious of external discharge paths on the VCC pin which can pull a current higher than the current limit of the internal VCC LDO. A load exceeding the current limit of the internal VCC LDO can potentially pull the VCC voltage low and turn off the VCC LDO through the UVLO, thereby shutting down the converter output.
  • A good power-up sequence is when at least one of VIN UVLO rising threshold or EN rising threshold is satisfied later than VCC UVLO rising threshold. For example, a practical power-up sequence is: VIN applied first, then the external bias applied, and then EN signal goes high.