SLVSJ50A February   2026  – July 2026 INA951-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Amplifier Input Common-Mode Signal
        1. 6.3.1.1 Input-Signal Bandwidth
        2. 6.3.1.2 Low Input Bias Current
        3. 6.3.1.3 Low VSENSE Operation
        4. 6.3.1.4 Wide Fixed Gain Output
        5. 6.3.1.5 Wide Supply Range
    4. 6.4 Device Functional Modes
      1. 6.4.1 Unidirectional Operation
      2. 6.4.2 High Signal Throughput
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 RSENSE and Device Gain Selection
      2. 7.1.2 Input Filtering
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Overload Recovery With Negative VSENSE
      3. 7.2.3 Application Curve
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

1 Features

  • VID v62/26605
  • Radiation - Total Ionizing Dose (TID):
    • TID performance assurance up to 30krad(Si)
    • Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
  • Radiation - Single-Event Effects (SEE):
    • Single Event Latch-Up (SEL) immune up to 43MeV-cm2 /mg at 125°C
    • Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
  • Supports defense, aerospace, and medical applications
    • Operating temperature from –55°C to +125°C
    • Controlled baseline
    • Au bondwire and NiPdAu lead finish
    • Outgassing test performed per ASTM E595
    • One fabrication, assembly, and test site
    • Extended product life cycle
    • Product traceability
  • Wide common-mode voltage:
    • Operational voltage: −4V to +80V
    • Survival voltage: −20V to +85V
  • Excellent CMRR:
    • 160dB DC-CMRR
    • 85dB AC-CMRR at 50kHz
  • Accuracy:
    • Gain:
      • Gain error: ±0.15% (maximum)
      • Gain drift: ±10ppm/ °C (maximum)
    • Offset:
      • Offset voltage: ±30µV (typical)
      • Offset drift: ±0.05µV/ °C (typical)
  • Available gain:
    • INA951-SEPA1, : 20V/V
  • High bandwidth: 1.3MHz
  • Slew rate: 2.5V/µs
  • Quiescent current: 1.5mA