SLVSKD4
April 2026
TDEL3G511-Q1
PRODUCTION DATA
1
1
Features
2
Applications
4
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Timing Characteristics
5.7
Switching Characteristics
5.8
Typical Characteristics
6
Parameter Measurement Information
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
Naming Convention
7.3.2
Timing Mechanism and Accuracy
7.3.3
CMOS Push-Pull Outputs
7.3.4
CMOS Schmitt-Trigger Inputs
7.3.5
Latching Logic with Known Power-Up State
7.3.6
Clamp Diode Structure
7.4
Device Functional Modes
7.4.1
Startup Operation
7.4.2
On-State Operation
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.1.1
Power Considerations
8.2.1.2
Input Considerations
8.2.1.3
Output Considerations
8.2.2
Detailed Design Procedure
8.2.3
Application Curves
8.3
Power Supply Recommendations
8.4
Layout
8.4.1
Layout Guidelines
8.4.2
Layout Example
9
Device and Documentation Support
9.1
Device Support
9.1.1
Device Nomenclature
9.2
Documentation Support
9.2.1
Related Documentation
9.3
Receiving Notification of Documentation Updates
9.4
Support Resources
9.5
Trademarks
9.6
Electrostatic Discharge Caution
9.7
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
5.8
Typical Characteristics
Table 5-1 Delay Time for Each Device
T
A
= 25°C (unless otherwise noted)
Device
Oscillator
Parameter
Timing Value
(1)
TDEL3G51100DRLR
Low speed
t
delay
100ms
t
osc
1.28ms
(1)
The delay time (t
delay
) can additionally vary by up to –t
osc
.
Figure 5-1
Supply Current vs Supply Voltage
Figure 5-3
Output Low-State Resistance vs Output Current
Figure 5-5
Input Voltage vs Supply Current
Figure 5-2
Pulse Width Error vs Temperature
Figure 5-4
Output High-State Resistance vs Output Current