SLVSM49 May   2026 LMG2104R022 , LMG2104R044

ADVANCE INFORMATION  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Device Comparison
  6. 5Device and Documentation Support
    1. 5.1 Documentation Support
      1. 5.1.1 Related Documentation
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Tape and Reel Information
    2. 7.2 Mechanical Data

1 Features

  • GaN half bridge power stage with integrated driver: 100V (GaN FET options: 2.2mΩ, 4.4mΩ)
  • Efficient and high-density power conversion with
    • Ultra-low propagation delay (20ns) and matching (2ns)
    • Independent turn-on and turn-off slew-rate control for both the GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization
    • Ideal diode mode (IDM) to reduce third quadrant losses in soft switching application
  • Input control flexibility
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead time option for IO-limited controllers
  • Robust protection
    • Interlock protection in IIM mode (LMG2104)
    • Internal bootstrap supply voltage regulation to prevent GaN FET overdrive
    • VDS monitoring based cycle-by-cycle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • External bias power supply: 5V
    • Supports 3.3V and 5V input logic levels
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling