SLYT862 March 2025 LM5066I , TPS25984B
A TVS diode is designed to protect electronic components from voltage spikes. The TVS diode begins to operate once the voltage on the diode exceeds the avalanche breakdown potential. Figure 4 is a graph of a TVS diode’s current-voltage curve.
Figure 4 TVS diode
characteristics.As you can see in Figure 4, the final clamping voltage is a function of the current, which the TVS diode shunts, and the dynamic resistance (Rd) of the TVS diode. Again, the dynamic resistance is a function of diode package size and the time duration (tP) that the TVS diode shunts the current.
For example, the SMAJ diode (13.52mm2) has a higher Rd than the SMBJ diode (19.44mm2), so the SMAJ diode leads to a higher clamping voltage at a given shunt current.
Use these values of Rd to calculate the clamping voltage, these values are available from the TVS diode manufacturer’s data sheet.
For tp ≤ 20μs:
For 20μs < tp < 1ms :
For tp ≥ 1ms:
This multiparameter dependency leads to a challenging iterative design process. To ease design, TI released an online tool for TVS selection [5]. Figure 5 illustrates the design methodology as a flow chart, while Table 1 lists the typical specifications of a rack server.
Figure 5 Flow chart for TVS diode
selection.| Parameter | Value |
|---|---|
| Nominal operating voltage (VIN) | 12V |
| Maximum operating voltage (VDC_max) | 13.2V |
| Circuit breaker current (IP) | 200A |
| Parasitic inductance (L) | 100nH |
| Maximum tolerable voltage (VC(max)) | 20V |
| Maximum operating temperature | 75°C |