SLYT882 October   2026 LMG708B0

 

  1.   1
  2. 1 Introduction
  3. 2 Integrated GaN for high power density conversion
  4. 3 Thermal challenges and dual-side cooling
  5. 4 GaN converter IC design and implementation
  6. 5 Experimental evaluation
  7. 6 Thermal performance
  8. 7 Conclusion
  9. 8 About the author
  10. 9 References
  11. 10Additional resources
  12. 11Trademarks

2 Integrated GaN for high power density conversion

Silicon metal-oxide semiconductor field-effect transistor (MOSFET) technology has served as the foundation of power converter design due to its availability and proven performance. However, as converter power levels and power density requirements continue to increase, conventional silicon-based implementations face growing challenges associated with switching losses and package parasitics. Integrated GaN power ICs address these limitations by combining high-speed GaN power FETs, gate drivers, and control circuitry within a single package, reducing parasitic inductance while simplifying converter implementation. The higher switching capability of GaN also enables operation at increased switching frequencies, which can reduce the required size of magnetic and capacitive components while enabling faster control-loop response.

Reducing the parasitic inductance between the GaN power FETs and integrated gate driver also improves control of the switching transitions, reducing unwanted ringing and associated switching losses. This improved switching behavior can help reduce electromagnetic interference (EMI), an important consideration for high-density power converters operating at high slew rates [1].

The four-phase converter design presented in this article uses the TI LMG708B0 integrated GaN power multi-chip module (MCM) IC to support the efficiency and power-density requirements of 48V-to-12V step-down conversion.