SNAK009A April   2022  – February 2024 ADC128S102-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Overview
  5. 2SEE Mechanisms
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Single-Event Latch-Up Results
  9. 6Summary
  10. 7Confidence Interval Calculations
  11. 8References
  12. 9Revision History

1 Overview

The ADC128S102-SEP is a radiation-tolerant, eight-channel, 50kSPS to 1MSPS, 12-bit analog-to-digital converter. The device uses single-ended CMOS technology and an SPI or MICROWIRE™ (serial I/O) interface standard. The voltage range is from 2.7V to 5.25V for both supplies, VA and VD. The digital inputs are not prone to latch-up and can be asserted before the digital supply.

See the product page for more information.

Table 1-1 Overview Information(1)
DescriptionDevice Information
TI part number ADC128S102-SEP
MLS numberADC128S102PWTSEP
Device function Radiation-tolerant, eight-channel, 50kSPS to 1MSPS, 12-bit ADC
TechnologyCMOS7
Exposure facility Radiation Effects Facility, Cyclotron Institute,
Texas A&M University
Heavy ion fluence per run1 × 106 – 1 × 107 ions/cm2
Irradiation temperature 125°C (for SEL testing)
(1) TI may provide technical, applications or design advice, quality characterization, and reliability data or service, providing these items shall not expand or otherwise affect TI's warranties as set forth in the Texas Instruments Incorporated Standard Terms and Conditions of Sale for Semiconductor Products and no obligation or liability shall arise from Semiconductor Products and no obligation or liability shall arise from TI's provision of such items.