11 Revision History
Changes from February 5, 2025 to August 14, 2026 (from Revision C (February 2025) to Revision D (August 2026))
- Updated the document to contain PCIe Gen 7.0
specificationsGo
- Updated the Device Comparison sectionGo
- Added PCIe Gen 7 Jitter Specification to Electrical Characteristics sectionGo
- Added I2C/SPI startup timing specification to Electrical Characteristics sectionGo
- Deleted 5MHz typical specification from Electrical Characteristics sectionGo
- Updated the Automatic Input Selection section to correct
typoGo
- Updated Tuning Word History Windows figureGo
- Updated the description of LOFL
status in the Holdover
sectionGo
- Updated Device POR Sequence imageGo
- Added APLL2 LDO information to power external XOGo
Changes from Revision B (July 2022) to Revision C (February 2025)
- Updated the number formatting for tables, figures, and cross-references
throughout the documentGo
- Corrected output format type from LVPECL to AC-LVPECL throughout the
documentGo
- Added typical RMS jitter with 4MHz HPF to Features
sectionGo
- Clarified the Description sectionGo
- Added the Device Comparison sectionGo
- Clarified the VDD and VDDO supply pin requirementsGo
- Changed the recommended CAP_DIG capacitor value from 100nF to
10µFGo
- Renamed "APLL3" to "BAW APLL" throughout the
documentGo
- Clarified footnote 1 of the Absolute Maximum Ratings
tableGo
- Changed from "JEDEC" to "AINSI/ESDA/JEDEC" for CDM parameter in the
ESD Ratings tableGo
- Added the operating ambient temperature to the Recommended
Operating Conditions
Go
- Corrected hyperlink in the Thermal Information
tableGo
- Clarified test conditions in the Electrical Characteristics
tableGo
- Corrected INx frequency range in the Electrical
Characteristics tableGo
- Changed the maximum HCSL output frequency from 400MHz to 650MHz in
the Electrical Characteristics tableGo
- Added the minimum and maximum HCSL output voltage to the
Electrical Characteristics tableGo
- Added RMS jitter with 4MHz HPF specification to the Electrical
Characteristics tableGo
- Changed the maximum 3.3V LVCMOS output skew from 10.15ns to 11ns in
the Electrical Characteristics tableGo
- Added PCIe Gen 6 jitter specification to the Electrical
Characteristics tableGo
- Updated the typical IN0 current consumption from 2.5mA to 3.6mA in
the Electrical Characteristics tableGo
- Moved the phase noise plots from the Typical Application
section to the Typical Characteristics sectionGo
- Updated the Overview sectionGo
- Updated the Functional Block Diagram
Go
- Updated the PLL Architecture Overview sectionGo
- Updated the DPLL sectionGo
- Updated the Independent DPLL Operation
sectionGo
- Updated the Cascaded DPLL Operation sectionGo
- Updated the APLL Cascaded With DPLL sectionGo
- Added hysteresis and register information to the Reference Input Buffer
Modes tableGo
- Added AC-coupled differential to reference diagram to the Clock
Input Interfacing and Termination sectionGo
- Updated the LVCMOS diagram in the Clock Input Interfacing and
Termination sectionGo
- Updated the XO Input Monitoring sectionGo
- Updated the APLL XO Reference (R) Divider sectionGo
- Added default APLL loop filter and loop bandwidth tables to the
Analog Loop Filters sectionGo
- Added the Output Source Muxes sectionGo
- Updated the Output Channel Muxes sectionGo
- Updated by combining SYSREF/1PPS Output Replication into the
SYSREF/1PPS Output sectionGo
- Changed Clock Outputs (OUTx_P/ N) title to Clock Output
Drivers and rearranged textGo
- Clarified the differential output formats and added table to the
Differential Output sectionGo
- Clarified the LVCMOS Output sectionGo
- Updated the Zero-Delay Mode (ZDM)
sectionGo
- Added the DPLL Programmable Phase Delay sectionGo
- Updated the Device Power-On Reset (POR)
sectionGo
- Updated the PLL Start-Up Sequence
sectionGo
- Added the Start-Up Options for Register Configuration
sectionGo
- Added the GPIO1 and SCS_ADD Functionalities sectionGo
- Added the ROM detailed description table to the ROM Page
Selection sectionGo
- Added the ROM Detailed Description sectionGo
- Added the Memory Overview sectionGo
- Added the Programming Through TICS Pro
sectionGo
- Updated the General Register Programming Sequence
sectionGo
- Added the Steps to Program the EEPROM
sectionGo
- Added the Overview of the SRAM Programming Methods
sectionGo
- Added the EEPROM Programming With the
Register Commit Method
sectionGo
- Added the EEPROM Programming With the Direct Writes Method or
Mixed Method sectionGo
- Added the Five MSBs of the I2C Address and the EEPROM Revision
Number sectionGo
- Added the output phase noise plot summary table to the
Applications Curves sectionGo
Changes from Revision A (May 2022) to Revision B (July 2022)
- Changed data sheet status from Advanced Information to Production Data
Go
Changes from Revision * (March 2022) to Revision A (May 2022)
- Changed typical/maximum RMS jitter at 312.5MHz from: 43fs typical/ 70fs maximum to:
42fs typical/ 60fs maximumGo
- Changed typical/maximum RMS jitter at 156.25MHz from: 50fs typical/ 80fs maximum to:
47fs typical/ 65fs maximumGo
- Changed the Detailed Description sectionGo
- Changed the Overview sectionGo
- Changed the Functional Block Diagram
Go
- Changed the PLL Architecture Overview sectionGo
- Added the SYSREF/1-PPS Output Replication sectionGo
- Changed the Clock Outputs (OUTx_P/N) sectionGo
- Changed the LVCMOS Output sectionGo