SNOAAB9 September 2026 LMG3526R030
This paper introduces the third-quadrant characteristics of GaN and provides an in-depth discussion of the mechanisms behind dead-time losses of GaN devices in soft-switching topologies. An adaptive dead-time adjustment mechanism based on TI GaN ZVD technology is proposed to adaptively optimize the primary- and secondary-side dead times of LLC/CLLC topologies, reduce dead-time losses, and minimize the adverse impact of the high reverse conduction voltage of GaN devices on system performance.