SNOS641I October   1999  – July 2025 LM4041-N , LM4041-N-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1.     Pin Functions
    2.     Pin Functions: ADJ Pinouts
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)
    6. 5.6  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)
    7. 5.7  LM4041-N LM4041-N-Q1 1.2 Electrical Characteristics (Extended Temperature Range)
    8. 5.8  LM4041-N LM4041-N-Q1 ADJ (Adjustable) Electrical Characteristics (Industrial Temperature Range)
    9. 5.9  LM4041-N LM4041-N-Q1 ADJ (Adjustable) Electrical Characteristics (Extended Temperature Range)
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Shunt Regulator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Adjustable Shunt Regulator
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detail Design Procedure
      3. 8.2.3 Bounded Amplifier
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detail Design Procedure
        3. 8.2.3.3 Application Curve
      4. 8.2.4 Voltage Level Detector
        1. 8.2.4.1 Design Procedure
        2. 8.2.4.2 Detail Design Procedure
      5. 8.2.5 Precision Current Sink and Source
        1. 8.2.5.1 Design Requirements
        2. 8.2.5.2 Detailed Design Procedure
      6. 8.2.6 100mA Current Source
        1. 8.2.6.1 Design Requirements
        2. 8.2.6.2 Detailed Design Procedure
      7. 8.2.7 LM4041 in Clamp Circuits
        1. 8.2.7.1 Design Requirements
        2. 8.2.7.2 Detailed Design Procedure
      8. 8.2.8 Floating Current Detector
        1. 8.2.8.1 Design Requirement
        2. 8.2.8.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.6 LM4041-NLM4041-N-Q1 1.2 Electrical Characteristics (Industrial Temperature Range)

All limits TA = TJ = 25°C. unless otherwise specified. The grades C, D, and E designate initial reverse breakdown voltage tolerances of ±0.5%, ±1.0%, and ±2.0%, respectively.
PARAMETERTEST CONDITIONSMIN(1)TYP(2)MAX(1)UNIT
VRReverse Breakdown VoltageIR = 100μA1.225V
Reverse breakdown voltage tolerance(3)IR = 100μATA = TJ = 25°CLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		±6mV
LM4041DIM3 LM4041QDIM3
LM4041DIZ, LM4041DIM7		±12
LM4041EIM3 LM4041QEIM3
LM4041EIZ, LM4041EIM7		±25
TA = TJ = TMIN to TMAXLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		±14
LM4041DIM3 LM4041QDIM3
LM4041DIZ, LM4041DIM7		±24
LM4041EIM3 LM4041QEIM3
LM4041EIZ, LM4041EIM7		±36
IRMINMinimum operating currentTA = TJ = 25°CLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		4560μA
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		65
TA = TJ = TMIN to TMAXLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		65
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		70
ΔVR/ΔTVR Temperature coefficient(3)IR = 10mA±20ppm/°C
IR = 1mATA = TJ = 25°C±15
TA = TJ = TMIN to TMAXLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		±100
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		±150
IR= 100μA±15
ΔVR/ΔIRReverse breakdown voltage change with operating current change(4)IRMIN ≤ IR ≤ 1mATA = TJ = 25°CLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		0.71.5mV
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		2
TA = TJ = TMIN to TMAXLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		2
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		2.5
1mA ≤ IR ≤ 12mATA = TJ = 25°CLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		2.56mV
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		8
TA = TJ = TMIN to TMAXLM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		8
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		10
ZRReverse dynamic impedanceIR = 1mA, f = 120Hz
IAC = 0.1 IR		LM4041CIM3LM4041QCIM3
LM4041CIZ, LM4041CIM7		0.51.5Ω
LM4041DIM3, LM4041QDIM3,
LM4041DIZ, LM4041DIM7
LM4041EIM3, LM4041QEIM3
LM4041EIZ, LM4041EIM7		2
eNWide band noiseIR = 100μA
10Hz ≤ f ≤ 10kHz		20μVRMS
ΔVRReverse breakdown voltage long-term stabilityt = 1000 hrs
T = 25°C ±0.1°C
IR = 100μA		120ppm
VHYSTThermal hysteresis(5)ΔT = −40°C to +125°C0.08%
(1) Limits are 100% production tested at 25°C. Limits over temperature are specified through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate AOQL.
(2) Typical values are at TJ = 25°C and represent most likely parametric norm.
(3) The over temperature limit for reverse breakdown voltage tolerance is defined as the room temperature reverse breakdown voltage tolerance ±[(ΔVR↱ΔT)(max ΔT)(VR)]. Where, ΔVR/ΔT is the VR temperature coefficient, max ΔT is the maximum difference in temperature from the reference point of 25 °C to TMAX or TMIN, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where max ΔT = 65°C is shown below:
A-grade: ±0.75% = ±0.1% ±100ppm/°C × 65°C
B-grade: ±0.85% = ±0.2% ±100ppm/°C × 65°C
C-grade: ±1.15% = ±0.5% ±100ppm/°C × 65°C
D-grade: ±1.98% = ±1.0% ±150ppm/°C × 65°C
E-grade: ±2.98% = ±2.0% ±150ppm/°C × 65°C
The total over-temperature tolerance for the different grades in the extended temperature range where max ΔT = 100 °C is shown below:
B-grade: ±1.2% = ±0.2% ±100ppm/°C × 100°C
C-grade: ±1.5% = ±0.5% ±100ppm/°C × 100°C
D-grade: ±2.5% = ±1.0% ±150ppm/°C × 100°C
E-grade: ±4.5% = ±2.0% ±150ppm/°C × 100°C
Therefore, as an example, the A-grade LM4041-NLM4041-N-Q1 1.2 has an over-temperature reverse breakdown voltage tolerance of ±1.2 V × 0.75% = ±9.2mV.
(4) Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.
(5) Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature –40°C and the +25°C measurement after cycling to temperature +125°C.