SNOSCY4E March   2015  – October 2018 LMG5200

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Block Diagram
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Mismatch Measurement
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Control Inputs
      2. 8.3.2 Start-up and UVLO
      3. 8.3.3 Bootstrap Supply Voltage Clamping
      4. 8.3.4 Level Shift
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 VCC Bypass Capacitor
        2. 9.2.2.2 Bootstrap Capacitor
        3. 9.2.2.3 Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Package Information

8.1 Overview

Figure 10 shows the LMG5200, half-bridge, GaN power stage with highly integrated high-side and low-side gate drivers, which includes built-in UVLO protection circuitry and an overvoltage clamp circuitry. The clamp circuitry limits the bootstrap refresh operation to ensure that the high-side gate driver overdrive does not exceed 5.4 V. The device integrates two, 15-mΩ GaN FETs in a half-bridge configuration. The device can be used in many isolated and non-isolated topologies allowing very simple integration. The package is designed to minimize the loop inductance while keeping the PCB design simple. The drive strengths for turnon and turnoff are optimized to ensure high voltage slew rates without causing any excessive ringing on the gate or power loop.