SNVSCK5B April   2024  – October 2025 TPS3842

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specification
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagram
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 SENSE Input
        1. 7.3.1.1 SENSE Hysteresis
      2. 7.3.2 Selecting the SENSE Delay Time
      3. 7.3.3 Selecting the RESET Delay Time
      4. 7.3.4 RESET Output
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation (VDD > VDD(min))
      2. 7.4.2 Above Power-On Reset but Less Than VDD(min) (VPOR < VDD < VDD(min))
      3. 7.4.3 Below Power-On Reset (VDD < VPOR)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Meeting the Sense and Reset Delay
      3. 8.2.3 Application Curve
      4. 8.2.4 Power Supply Recommendations
      5. 8.2.5 Layout
        1. 8.2.5.1 Layout Guidelines
        2. 8.2.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Support Resources
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TPS3842 UNIT
DRL
6 PINS
RθJA Junction-to-ambient thermal resistance 153.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 86.3 °C/W
RθJB Junction-to-board thermal resistance 42.8 °C/W
ΨJT Junction-to-top characterization parameter 2.9 °C/W
ΨJB Junction-to-board characterization parameter 41.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.