TIDUF64C December   2023  – July 2026

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
    2. 1.2 PV Input With Boost Converter
    3. 1.3 Bidirectional DC/DC Converter
    4. 1.4 DC/AC Converter
  8. 2System Design Theory
    1. 2.1 Boost Converter
      1. 2.1.1 Inductor Design
      2. 2.1.2 Rectifier Diode Selection
      3. 2.1.3 MPPT Operation
    2. 2.2 Bidirectional DC/DC Converter
      1. 2.2.1 Inductor Design
      2. 2.2.2 Low-Voltage Side Capacitor
      3. 2.2.3 High-Voltage Side Capacitor
    3. 2.3 DC/AC Converter
      1. 2.3.1 Boost Inductor Design
      2. 2.3.2 DC-Link Capacitor
  9. 3System Overview
    1. 3.1 Block Diagram
    2. 3.2 Design Considerations
      1. 3.2.1 Boost Converter
        1. 3.2.1.1 High-Frequency FETs
        2. 3.2.1.2 Input Voltage and Current Sense
      2. 3.2.2 Bidirectional DC/DC Converter
        1. 3.2.2.1 High-Frequency FETs
        2. 3.2.2.2 Current and Voltage Measurement
        3. 3.2.2.3 Input Relay
      3. 3.2.3 DC/AC Converter
        1. 3.2.3.1 High-Frequency FETs
        2. 3.2.3.2 Current Measurements
        3. 3.2.3.3 Voltage Measurements
        4. 3.2.3.4 Auxiliary Power Supply
        5. 3.2.3.5 Passive Components Selection
    3. 3.3 Highlighted Products
      1. 3.3.1  TMDSCNCD28P55X - controlCARD Evaluation Module
      2. 3.3.2  TMDSCNCD280039C - TMS320F280039C Evaluation Module C2000™ MCU controlCARD™
      3. 3.3.3  LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection and Temperature Reporting
      4. 3.3.4  TMCS1123 - Precision Hall-Effect Current Sensor
      5. 3.3.5  AMC1302 - Precision, ±50-mV Input, Reinforced Isolated Amplifier
      6. 3.3.6  ISO7741 Robust EMC, Quad-channel, 3 Forward, 1 Reverse, Reinforced Digital Isolator
      7. 3.3.7  ISO7762 Robust EMC, Six-Channel, 4 Forward, 2 Reverse, Reinforced Digital Isolator
      8. 3.3.8  UCC14131-Q1 Automotive, 1.5-W, 12-V to 15-V VIN, 12-V to 15-V VOUT, High-Density > 5-kVRMS Isolated DC/DC Module
      9. 3.3.9  ISOW1044 Low-Emissions, 5-kVRMS Isolated CAN FD Transceiver With Integrated DC/DC Power
      10. 3.3.10 ISOW1412 Low-Emissions, 500kbps, Reinforced Isolated RS-485, RS-422 Transceiver With Integrated Power
      11. 3.3.11 OPA4388 Quad, 10-MHz, CMOS, Zero-Drift, Zero-Crossover, True RRIO Precision Operational Amplifier
      12. 3.3.12 OPA2388 Dual, 10-MHz, CMOS, Zero-Drift, Zero-Crossover, True RRIO Precision Operational Amplifier
      13. 3.3.13 INA181 26-V Bidirectional 350-kHz Current-Sense Amplifier
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 Additional Hardware Recommendations
    2. 4.2 Test Setup
      1. 4.2.1 Boost Stage
      2. 4.2.2 Bidirectional DC/DC Stage
        1. 4.2.2.1 Buck Mode
        2. 4.2.2.2 Boost Mode
      3. 4.2.3 DC/AC Stage
    3. 4.3 Test Results
      1. 4.3.1 Boost Converter
        1. 4.3.1.1 Switching Node Waveform
        2. 4.3.1.2 Efficiency Measurement
        3. 4.3.1.3 GaN Junction Temperature Measurement
      2. 4.3.2 Bidirectional DC/DC Converter
        1. 4.3.2.1 Buck Mode
          1. 4.3.2.1.1 Efficiency Measurement
          2. 4.3.2.1.2 GaN Junction Temperature Measurement
        2. 4.3.2.2 Boost Mode
          1. 4.3.2.2.1 Efficiency Measurement
          2. 4.3.2.2.2 Switching Node Waveform
          3. 4.3.2.2.3 GaN Junction Temperature Measurement
      3. 4.3.3 DC/AC Converter
        1. 4.3.3.1 Efficiency Measurements
        2. 4.3.3.2 Switching Node Waveforms
        3. 4.3.3.3 Total Harmonic Distortion Comparison
        4. 4.3.3.4 GaN Junction Temperature Measurements
        5. 4.3.3.5 Reactive Power Capability
        6. 4.3.3.6 Anti-islanding
  11. 5Design and Documentation Support
    1. 5.1 Design Files
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Authors
  13. 7Revision History

4.3.3.2 Switching Node Waveforms

Figure 4-3 shows the voltage of the switching node of the H-Bridge with unipolar modulation scheme. The image shows that no important overvoltage is detected even when the switching is at 60kV/μs, with a rise time of around 25ns.

TIDA-010938 DC/AC Switching Node in H-Bridge Unipolar
C1 - Line current, C2 - Switching node voltage, C3 - DC bus voltage
Figure 4-17 DC/AC Switching Node in H-Bridge Unipolar

The voltage of the switching node of the H-bridge with bipolar modulation scheme is measured as shown in Figure 4-18. The image shows that no important overvoltage is detected even when the switching is at 60kV/μs, with a rise time of around 25ns.

TIDA-010938 DC/AC Switching Node in H-Bridge Bipolar
C1 - Line current, C2 - Switching node voltage, C3 - DC bus voltage
Figure 4-18 DC/AC Switching Node in H-Bridge Bipolar

Figure 4-19 shows the voltage of the switching node of the HERIC modulation scheme. From a topology point of view, in HERIC mode, due to additional zero-voltage states in positive and negative half-cycles, the voltage across the FETs is also halved. The switching node voltage rises from 200V to 400V. The other switching node in this scenario ranges from 0V to 200V.

TIDA-010938 DC/AC Switching Node in HERIC
C1 - Line voltage, C2 - Line current, C3 - Switching node voltage, C4 -DC bus voltage
Figure 4-19 DC/AC Switching Node in HERIC