SNIS212C December   2019  – September 2020 TMP64

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 TMP64 R-T table
      2. 8.3.2 Linear resistance curve
      3. 8.3.3 Positive Temperature Coefficient (PTC)
      4. 8.3.4 Built-In Fail Safe
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Thermistor Biasing Circuits
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Thermal Protection With Comparator
          2. 9.2.1.2.2 Thermal Foldback
      2. 9.2.2 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Silicon-based thermistor with a
    positive temperature coefficient (PTC)
  • Linear resistance change across temperature
  • 47-kΩ nominal resistance at 25 °C (R25)
    • ±1% maximum (0 °C to 70 °C)
  • Wide operating temperature of –40 °C to +150 °C
  • Consistent sensitivity across temperature
    • 6400 ppm/°C TCR (25 °C)
    • 0.2% typical TCR tolerance across temperature range
  • Fast thermal response time of 0.6 s (DEC)
  • Long lifetime and robust performance
    • Built-in fail-safe in case of short-circuit failures
    • 0.5% typical long term sensor drift