Power density 

Achieve more power in smaller spaces, enhancing system functionality at reduced system costs

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What technologies are enabling greater density?

Board area and height are becoming limiting factors as power demands increase. Power designers must squeeze more circuitry into their applications to differentiate their products while also increasing efficiency and enhancing thermal performance. Higher power levels in smaller form factors are now possible using TI’s advanced process, packaging and circuit-design technologies.

Understanding the Trade-Offs and Technologies to Increase Power Density

Space is limited in power-supply designs, and engineers face constant pressure to do more with less. The need for improved power density is clear, but what limits designers from increasing power density today? In this paper, we examine the barriers in depth and provide technology examples to help you overcome them.

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Benefits of TI technologies for power density

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Less heat

Achieve excellent device switching performance with our advanced silicon and gallium-nitride (GaN) technologies.

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Improved thermal performance

Remove heat from the package with advanced cooling technologies, including enhanced HotRod™ QFN packaging, power wafer chip-scale packaging (WCSP) and top-side cooling.

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Increased efficiency

Use smaller passives while switching at higher frequencies – without sacrificing efficiency – with multilevel converter topologies and advanced power-stage gate drivers.

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Reduced system footprint

Save board space, simplify board layout and achieve low parasitics using advanced multichip module technologies.

Understanding the fundamental technologies of power density

Watch this training series, where we outline how to achieve higher power density by examining four critical aspects of high-power-density solutions, and relevant technologies and products supporting these specific requirements.

Watch the video series

Featured power-density products

Gallium nitride (GaN) ICs LMG3522R030-Q1 PREVIEW Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
NEW Load switches TPS22992 ACTIVE 5.5-V, 6-A, 10-mΩ load switch with adjustable rise time and adjustable quick output discharge
Buck modules (integrated inductor) TPSM53604 ACTIVE 36-V, 4-A step-down power module in small 5.5 x 5 x 4-mm Enhanced HotRod™ QFN with simple footprint
NEW Isolated DC/DC converters & modules UCC14240-Q1 PREVIEW Automotive, 1.5-W, 24V-Vin, regulated, 3-kVRMS isolated DC-DC module with integrated transformer

Featured reference designs for power density

Reference design
GaN-based, 6.6-kW, bidirectional, onboard charger reference design
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)
Reference design
Integrated USB Type-C® power delivery (PD) and charging reference design for 2-4 cell batteries

This reference design features charging up to 20 V at 5 A without the need for any external FETs, enabling a much smaller solution size and reducing total BOM cost. A microprocessor is also not necessary as the TPS25750 power delivery (PD) controller will handle the I2C communication to the BQ25792 (...)

Reference design
1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC reference design

This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. The highly efficient design supports two main power stages, including a front-end continuous conduction (...)

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