Power density 

Achieve more power in smaller spaces, enhancing system functionality at reduced system costs

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What technologies are enabling greater density?

Board area and height are becoming limiting factors as power demands increase. Power designers must squeeze more circuitry into their applications to differentiate their products while also increasing efficiency and enhancing thermal performance. Higher power levels in smaller form factors are now possible using TI’s advanced process, packaging and circuit-design technologies.

Understanding the Trade-Offs and Technologies to Increase Power Density

Space is limited in power-supply designs, and engineers face constant pressure to do more with less. The need for improved power density is clear, but what limits designers from increasing power density today? In this paper, we examine the barriers in depth and provide technology examples to help you overcome them.

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Benefits of TI technologies for power density


Smaller footprint, less heat

Save board space with high-performance device options that pair unique integration techniques and ultra-low RDSON, low-RSP FETs for smaller die sizes.


Improved thermal performance

Remove heat from the package with advanced cooling technologies, including enhanced HotRod™ QFN packaging, power wafer chip-scale packaging (WCSP) and top-side cooling.


Increased efficiency

Use smaller passives while switching at higher frequencies – without sacrificing efficiency – with multilevel converter topologies and advanced power-stage gate drivers.

Three ways to overcome thermal challenges

From circuit design to packaging R&D, thermally optimized system designs and more, TI is your partner in solving power density challenges. Learn more about our multi-faceted approach to making smaller, higher performance ICs a reality.

Featured power-density products

NEW eFuses & hot swap controllers TPS25985 ACTIVE 4.5-V to 16-V, 0.59-mΩ, 80-A stackable compact eFuse with accurate and fast current monitor
NEW Buck modules (integrated inductor) TLVM13660 ACTIVE 36-V input, 1-V to 6-V output, 6-A buck power module in 5-mm x 5.5-mm enhanced HotRod™ QFN
NEW Buck converters (integrated switch) TPS566242 ACTIVE 3-V to 16-V input voltage, 6-A ECO mode, synchronous buck converter in SOT-563 package
Gallium nitride (GaN) ICs LMG3522R030-Q1 PREVIEW Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Featured reference designs for power density

Reference design
GaN-based, 6.6-kW, bidirectional, onboard charger reference design
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)
Reference design
Integrated USB Type-C® power delivery (PD) and charging reference design for 2-4 cell batteries

This reference design features charging up to 20 V at 5 A without the need for any external FETs, enabling a much smaller solution size and reducing total BOM cost. A microprocessor is also not necessary as the TPS25750 power delivery (PD) controller will handle the I2C communication to the BQ25792 (...)

Reference design
Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design
This reference design is a high-density and high-efficiency 5-kW totem-pole power factor correction (PFC) design. The design uses a two-phase totem-pole PFC operating with variable frequency and zero voltage switching (ZVS). The control uses a new topology and improved triangular current mode (...)

Breaking down the fundamentals of power density

Every new technology advancement demands more power in smaller spaces. That’s the promise of power density – smaller packages, higher current, fewer trade-offs. See how we're driving greater density for the years to come.

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