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UCC5880-Q1

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Automotive, 20-A, isolated real-time variable IGBT/SiC MOSFET gate driver with advanced protection

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
SSOP (DFC) 32 106.09 mm² 10.3 x 10.3
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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Technical documentation

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Type Title Date
* Data sheet UCC5880-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet (Rev. A) PDF | HTML 26 Feb 2024
Technical article 開發新一代電氣化推進系統 PDF | HTML 20 May 2024
Technical article 차세대 전기 프로펄션 시스템 개발 PDF | HTML 17 May 2024
Technical article Developing next-generation electrified propulsion systems PDF | HTML 14 May 2024
Technical article Three key components needed to boost performance of next generation EV traction inverters PDF | HTML 05 Jan 2024
Technical article How to maximize SiC traction inverter efficiency with real-time variable gate drive strength PDF | HTML 04 Jan 2024
White paper Simplifying Power Conversion in High-Voltage Systems PDF | HTML 09 Nov 2023
Certificate UCC5880INVERTEREVM EU RoHS Declaration of Conformity (DoC) 13 Mar 2023
White paper Design Priorities in EV Traction Inverter With Optimum Performance (Rev. A) PDF | HTML 08 Feb 2023
Technical article Improving safety in EV traction inverter systems PDF | HTML 08 Dec 2022
Certificate UCC5880QEVM-057 EU RoHS Declaration of Conformity (DoC) 11 Nov 2022
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 27 Sep 2022
White paper 최적의성능을 갖춘 EV 트랙션 인버터에서 설계 우선 순위 PDF | HTML 27 Sep 2022
White paper Traction Inverters – A Driving Force Behind Vehicle Electrification PDF | HTML 08 Sep 2022
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 17 Aug 2022
White paper 트랙션 인버터 – 차량 전기화를 이끄는 동력 PDF | HTML 17 Aug 2022
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 10 Jun 2022

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