The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | 30V N Channel NexFET Power MOSFET datasheet (Rev. A) | 20 Jul 2010 | |
| Application note | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
| Technical article | Understanding the benefits of “lead-free” power MOSFETs | 08 Feb 2019 | ||
| Application note | QFN and SON PCB Attachment (Rev. B) | PDF | HTML | 24 Aug 2018 | |
| Selection guide | Power Management Guide 2018 (Rev. R) | 25 Jun 2018 | ||
| Application note | Semiconductor and IC Package Thermal Metrics (Rev. C) | PDF | HTML | 19 Apr 2016 | |
| Technical article | When to use load switches in place of discrete MOSFETs | 03 Feb 2016 | ||
| Technical article | 48V systems: Driving power MOSFETs efficiently and robustly | 08 Oct 2015 | ||
| Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
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The TPS51200EVM evaluation board, HPA322A is designed to evaluate the performance andcharacteristics of TI's cost optimized DDR/DDR2/DDR3/LP DDR3 VTT termination regulator, the TPS51200. The TPS51200 is designed to provide proper termination voltage and a 10-mA buffered reference voltage for DDR (...)
| Package | Pins | Download |
|---|---|---|
| (DQJ) | 8 | View options |
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