CSD87312Q3E
30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm
CSD87312Q3E
- Common Source Connection
- Ultra Low Drain to Drain On-Resistance
- Space Saving SON 3.3 x 3.3mm Plastic Package
- Optimized for 5V Gate Drive
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet | 19 Nov 2011 | |
Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | 06 Dec 2023 | |
Application note | MOSFET Support and Training Tools (Rev. C) | PDF | HTML | 22 Nov 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application note | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. C) | PDF | HTML | 19 Apr 2016 | |
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
SYNC-BUCK-FET-LOSS-CALC — Power Loss Calculation Tool for Synchronous Buck Converter
Supported products & hardware
Products
Power blocks
N-channel MOSFETs
Package | Pins | Download |
---|---|---|
VSON (DPA) | 8 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
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Support & training
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