The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.
| Top documentation | Type | Title | Format options | Date |
|---|---|---|---|---|
| * | Data sheet | Dual 30-V N-Channel NexFet Power MOSFET, CSD87312Q3E datasheet | Nov 19, 2011 | |
| Application note | MOSFET Support and Training Tools (Rev. G) | PDF | HTML | Oct 27, 2025 | |
| Application note | Avoid Common Mistakes When Selecting And Designing With Power MOSFETs | PDF | HTML | Nov 6, 2024 | |
| Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | Mar 25, 2024 | |
| Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | Dec 18, 2023 | |
| Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | Dec 6, 2023 | |
| Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | Mar 13, 2023 | |
| Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | May 31, 2022 | |
| Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | Nov 16, 2011 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VSON (DPA) | 8 | Ultra Librarian |
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.
If you have questions about quality, packaging or ordering TI products, see TI support.