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INA1H94-SEP

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Radiation-tolerant high common-mode voltage difference amplifier

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Data sheet

INA1H94-SEP

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Data sheet Order now

Product details

Number of channels 1 Vs (min) (V) 4 Vs (max) (V) 18 CMRR (min) (dB) 84 Common-mode input low (min) (V) -150 Common-mode input high (max) (V) 150 Input offset (±) (max) (V) 0.0035 Iq (typ) (mA) 0.81 Slew rate (typ) (V/µs) 5 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1 Small-signal bandwidth (typ) (Hz) 500000 Rating Space Operating temperature range (°C) -55 to 125 Gain error (±) (max) (%) 0.65
Number of channels 1 Vs (min) (V) 4 Vs (max) (V) 18 CMRR (min) (dB) 84 Common-mode input low (min) (V) -150 Common-mode input high (max) (V) 150 Input offset (±) (max) (V) 0.0035 Iq (typ) (mA) 0.81 Slew rate (typ) (V/µs) 5 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1 Small-signal bandwidth (typ) (Hz) 500000 Rating Space Operating temperature range (°C) -55 to 125 Gain error (±) (max) (%) 0.65
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Radiation tolerant
    • Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
    • ELDRS-free up to TID = 30krad(Si)
    • Single event latch-up (SEL) immune to 43MeV×cm2 /mg
    • Single event effect (SEE) characterized to 43MeV×cm2 /mg
  • Space enhanced plastic
    • Supports defense and aerospace applications
    • Controlled baseline
    • One assembly and test site
    • One Fabrication site
    • Extended product life cycle
    • Product traceability
    • Outgassing test performed per ASTM E595
    • Au bondwire and NiPdAu lead finish
  • Common-mode voltage range: ±150V
  • Minimum CMRR: 84dB from –55°C to +125°C
  • DC specifications:
    • Maximum gain error: 0.067%
    • Typical gain error drift: 1.5ppm/°C
    • Typical gain nonlinearity: 0.0005% FSR
  • AC performance:
    • Small-signal bandwidth: 500kHz
    • Typical slew rate: 5V/µs
  • Wide supply range: ±2V to ±9V
  • Radiation tolerant
    • Total ionizing dose (TID) RLAT for every wafer up to 30krad(Si)
    • ELDRS-free up to TID = 30krad(Si)
    • Single event latch-up (SEL) immune to 43MeV×cm2 /mg
    • Single event effect (SEE) characterized to 43MeV×cm2 /mg
  • Space enhanced plastic
    • Supports defense and aerospace applications
    • Controlled baseline
    • One assembly and test site
    • One Fabrication site
    • Extended product life cycle
    • Product traceability
    • Outgassing test performed per ASTM E595
    • Au bondwire and NiPdAu lead finish
  • Common-mode voltage range: ±150V
  • Minimum CMRR: 84dB from –55°C to +125°C
  • DC specifications:
    • Maximum gain error: 0.067%
    • Typical gain error drift: 1.5ppm/°C
    • Typical gain nonlinearity: 0.0005% FSR
  • AC performance:
    • Small-signal bandwidth: 500kHz
    • Typical slew rate: 5V/µs
  • Wide supply range: ±2V to ±9V

The INA1H94-SEP is a radiation-hardened precision unity-gain difference amplifier with a very high input common-mode voltage range. The INA1H94-SEP is a single, monolithic device that consists of a precision op amp and an integrated thin-film resistor network. The INA1H94-SEP can accurately measure small differential voltages in the presence of common-mode signals up to ±150V.

In many applications where galvanic isolation in not required, the INA1H94-SEP can replace isolation amplifiers. The INA1H94-SEP can help eliminate costly isolated input side power supplies, along with the associated ripple, noise, and quiescent current. The excellent 0.0005% typical nonlinearity, high common-mode, and 500kHz bandwidth of the INA1H94-SEP makes for a compelling sensor readout device.

The INA1H94-SEP is a radiation-hardened precision unity-gain difference amplifier with a very high input common-mode voltage range. The INA1H94-SEP is a single, monolithic device that consists of a precision op amp and an integrated thin-film resistor network. The INA1H94-SEP can accurately measure small differential voltages in the presence of common-mode signals up to ±150V.

In many applications where galvanic isolation in not required, the INA1H94-SEP can replace isolation amplifiers. The INA1H94-SEP can help eliminate costly isolated input side power supplies, along with the associated ripple, noise, and quiescent current. The excellent 0.0005% typical nonlinearity, high common-mode, and 500kHz bandwidth of the INA1H94-SEP makes for a compelling sensor readout device.
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* Data sheet INA1H94-SEP Radiation-Tolerant, High Common-Mode Voltage Difference Amplifier datasheet PDF | HTML 18 Dec 2025
* Radiation & reliability report INA1H94-SEP Production Flow and Reliability Report PDF | HTML 08 Dec 2025
* Radiation & reliability report INA1H94-SEP Radiation-Tolerant, High Common-Mode Voltage Difference Amplifier TID Report 05 Dec 2025
* Radiation & reliability report INA1H94-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 03 Dec 2025
Selection guide TI Space Products (Rev. K) 04 Apr 2025

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