Product details

Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 44 Total supply voltage (Min) (+5V=5, +/-5V=10) 10 Rail-to-rail No GBW (Typ) (MHz) 5 Slew rate (Typ) (V/us) 12 Vos (offset voltage @ 25 C) (Max) (mV) 2 Iq per channel (Typ) (mA) 5 Vn at 1 kHz (Typ) (nV/rtHz) 12 Rating Military Operating temperature range (C) -55 to 125 Offset drift (Typ) (uV/C) 5 Features Input bias current (Max) (pA) 100 CMRR (Typ) (dB) 100 Output current (Typ) (mA) 25 Architecture FET
Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 44 Total supply voltage (Min) (+5V=5, +/-5V=10) 10 Rail-to-rail No GBW (Typ) (MHz) 5 Slew rate (Typ) (V/us) 12 Vos (offset voltage @ 25 C) (Max) (mV) 2 Iq per channel (Typ) (mA) 5 Vn at 1 kHz (Typ) (nV/rtHz) 12 Rating Military Operating temperature range (C) -55 to 125 Offset drift (Typ) (uV/C) 5 Features Input bias current (Max) (pA) 100 CMRR (Typ) (dB) 100 Output current (Typ) (mA) 25 Architecture FET
TO-CAN (LMC) 8 80 mm² 8.96 x 8.96
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)
  • Advantages
    • Replace Expensive Hybrid and Module FET
      Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling
      Compared With MOSFET Input Devices
    • Excellent for Low Noise Applications Using
      Either High or Low Source Impedance–Very
      Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or
      Common-Mode Rejection as in Most
      Monolithic Amplifiers
    • New Output Stage Allows Use of Large
      Capacitive Loads (5,000 pF) Without Stability
      Problems
    • Internal Compensation and Large Differential
      Input Voltage Capability
  • Common Features
    • Low Input Bias Current: 30 pA
    • Low Input Offset Current: 3 pA
    • High Input Impedance: 1012 Ω
    • Low Input Noise Current: 0.01 pA/√Hz
    • High Common-Mode Rejection Ratio: 100 dB
    • Large DC Voltage Gain: 106 dB
  • Uncommon Features
    • Extremely Fast Settling Time to 0.01%:
      • 4 µs for the LFx55 devices
      • 1.5 µs for the LFx56
      • 1.5 µs for the LFx57 (AV = 5)
    • Fast Slew Rate:
      • 5 V/µs for the LFx55
      • 12 V/µs for the LFx56
      • 50 V/µs for the LFx57 (AV = 5)
    • Wide Gain Bandwidth:
      • 2.5 MHz for the LFx55 devices
      • 5 MHz for the LFx56
      • 20 MHz for the LFx57 (AV = 5)
    • Low Input Noise Voltage:
      • 20 nV/√Hz for the LFx55
      • 12 nV/√Hz for the LFx56
      • 12 nV/√Hz for the LFx57 (AV = 5)

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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Technical documentation

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Type Title Date
* Data sheet LFx5x JFET Input Operational Amplifiers datasheet (Rev. D) 30 Nov 2015
Technical article What is an op amp? 21 Jan 2020
Technical article How to lay out a PCB for high-performance, low-side current-sensing designs 06 Feb 2018
Technical article Low-side current sensing for high-performance cost-sensitive applications 22 Jan 2018
Technical article Voltage and current sensing in HEV/EV applications 22 Nov 2017
E-book The Signal e-book: A compendium of blog posts on op amp design topics 28 Mar 2017

Design & development

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