The LMG3622 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3622 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control. The current-sense emulation reduces power dissipation compared to the traditional currentsense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.
The LMG3622 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO), cycle-by-cycle current limit, and overtemperature protection. Overtemperature protection is reported with the opendrain FLT pin.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG3622650-V120-mΩ GaN FET With Integrated Driverand Current-Sense Emulation datasheet (Rev. A) | PDF | HTML | 14 Nov 2023 |
| Technical article | The benefits of low-power GaN in common AC/DC power topologies | PDF | HTML | 30 Jan 2024 | |
| Application brief | Maximize System Efficiency With Integrated Current Sensing From TI GaN | PDF | HTML | 30 Nov 2023 | |
| Product overview | Designing With the LMG362x Family of Low-Power GaN FETs | PDF | HTML | 28 Nov 2023 | |
| Certificate | LMG3622EVM-082 EU Declaration of Conformity (DoC) | 21 Aug 2023 |
For additional terms or required resources, click any title below to view the detail page where available.
LMG3622EVM-082 demonstrates high efficiency and high density for a 65-W USB Type-C® Power Delivery (PD) off-line adapter using the LMG3622 integrated GaN FET with current sense emulation. The input supports a universal 90 VAC to 265 VAC and the single output can be set to 5 V, 9 V and 15 V all at (...)
| Package | Pins | Download |
|---|---|---|
| VQFN (REQ) | 38 | View options |
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The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use of LMG36XX integrated GaN FET.
Rev A