TLE2024B Excalibur High-Speed Low-Power Precision Quad Operational Amplifier | TI.com

TLE2024B
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Excalibur High-Speed Low-Power Precision Quad Operational Amplifier

 

Description

The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.

A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.

Features

  • Supply Current . . . 300 µA Max
  • High Unity-Gain Bandwidth . . . 2 MHz Typ
  • High Slew Rate . . . 0.45 V/µs Min
  • Supply-Current Change Over Military Temp
    Range . . . 10 µA Typ at VCC ± = ± 15 V
  • Specified for Both 5-V Single-Supply and ±15-V Operation
  • Phase-Reversal Protection
  • High Open-Loop Gain . . . 6.5 V/µV (136 dB) Typ
  • Low Offset Voltage . . . 100 µV Max
  • Offset Voltage Drift With Time
    0.005 µV/mo Typ
  • Low Input Bias Current . . . 50 nA Max
  • Low Noise Voltage . . . 19 nV/√Hz Typ

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Parametrics

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Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Offset drift (Typ) (uV/C) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) CMRR (Typ) (dB) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Input bias current (Max) (pA) Output current (Typ) (mA) Features Architecture
TLE2024B Order now 4     4     40     1.7     0.5     In to V-     0.6     2     0.2     17     95     Catalog     -55 to 125     SOIC | 16     16SOIC: 77 mm2: 7.5 x 10.3 (SOIC | 16)     70000     3         Bipolar    
TLE2021B Samples not available 1     4     40     1.7     0.5     In to V-     0.2     2     0.17     17     110     Military     -55 to 125     CDIP | 8
LCCC | 20    
8CDIP: 64 mm2: 6.67 x 9.6 (CDIP | 8)
20LCCC: 79 mm2: 8.89 x 8.89 (LCCC | 20)    
70000     3         Bipolar