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TRF0108-SEP

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Radiation-tolerant, near-DC to 12-GHz, differential to single-ended (D2S) RF amplifier

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Data sheet

TRF0108-SEP

ACTIVE
Data sheet Order now

Product details

Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.2, 15.5 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 27 P1dB (typ) (dBm) 11.4 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -50 OIP2 (typ) (dBm) 43 2nd harmonic (dBc) -49 Supply voltage (V) 5 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
Type RF FDA Frequency (min) (MHz) 0.01 Frequency (max) (MHz) 12000 Gain (typ) (dB) 15.2, 15.5 Noise figure (typ) (dB) 10.9 OIP3 (typ) (dBm) 27 P1dB (typ) (dBm) 11.4 Frequency of harmonic distortion measurement (GHz) 2 3rd harmonic (dBc) -50 OIP2 (typ) (dBm) 43 2nd harmonic (dBc) -49 Supply voltage (V) 5 Current consumption (mA) 170 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 43 Radiation, TID (typ) (rad) 30000
— (—) — See data sheet
  • Vendor item drawing number: VID V62/26604
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA
  • Vendor item drawing number: VID V62/26604
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 30krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 30krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of 43MeV‑cm2/mg
      • Single event transient (SET) characterized to LET of 43MeV‑cm2/mg
  • Space-enhanced plastic (Space EP, SEP)
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Differential to single-ended (D2S) RF amplifier
  • Near-DC to 12GHz
  • Gain: 15.2dB at 2GHz
  • OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
  • OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
  • NF: 10.9dB (2GHz), 12.1dB (6GHz)
  • HD2 (1GHz): –57dBc at 2dBm
  • HD3 (1GHz): –57dBc at 2dBm
  • Additive (residual) phase noise (1GHz):
    • –154.6dBc/Hz at 10kHz offset
  • Gain and phase imbalance: ±0.6dB and ±3º
  • Differential input matched to 100Ω, Single-ended output matched to 50Ω
  • Power-down feature
  • 5V supply
  • Active current: 170mA

The TRF0108-SEP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SEP or AFE7950-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SEP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.

The TRF0108-SEP is a very high performance, differential-to-single-ended (D2S) amplifier optimized for radio-frequency (RF) applications. The device is an excellent choice for applications that require a D2S conversion when driven by a digital-to-analog converter (DAC) such as the high-performance DAC39RF10-SEP or AFE7950-SEP. The on-chip matching components simplify printed circuit board (PCB) implementation and provide the highest performance over the usable bandwidth. The device is fabricated using Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, WQFN-FCRLF 2mm x 2mm package.

The TRF0108-SEP operates on a single 5V supply and consumes about 170mA of active current. A power-down feature is also available for power savings.
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Technical documentation

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* Data sheet TRF0108-SEP Radiation-Tolerant, Near-DC to 12GHz, Differential to Single-Ended RF Amplifier datasheet PDF | HTML 23 Dec 2025
* Radiation & reliability report TRF0108-SEP Single-Event Effects (SEE) Radiation Report PDF | HTML 30 Mar 2026
* Radiation & reliability report TRF0108-SEP Total Ionizing Dose (TID) Report 30 Mar 2026
Selection guide TI Space Products (Rev. L) 27 Mar 2026

Design & development

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Simulation model

TRF0108-SEP S-Parameter Model

SLOM539.ZIP (8 KB) - S-Parameter Model
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Calculation tool

RF-CASCADE-CALC-TOOL — TI RF Cascade Calculator

A browser-based RF lineup analysis tool supporting up to 10 stages. Computes gain, NF, OIP3, OIP2, OP1dB, and derived metrics. Features dual-axis Plotly charts, P1dB saturation detection, and export to CSV
Supported products & hardware

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Reference designs

TIDA-010274 — Space-grade discrete RF sampling transceiver reference design

This reference design incorporates a 10 GSPS dual digital-to-analog converter and a 5 GSPS dual analog-to-digital converter with active baluns on the RF interface supporting up through X-band. The design also incorporates a space-grade clocking daughter card and a space-grade power solution (...)
Design guide: PDF
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