封裝資訊
封裝 | 引腳 VSONP (DQJ) | 8 |
作業溫度範圍 (°C) -55 to 150 |
包裝數量 | 運送包裝 2,500 | LARGE T&R |
CSD19531Q5A 的特色
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5 mm × 6 mm Plastic Package
CSD19531Q5A 的說明
This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%
For all available packages, see the orderable addendum at the end of the data sheet.