封裝資訊
| 封裝 | 引腳 CFP (HKH) | 20 |
| 作業溫度範圍 (°C) -55 to 125 |
| 包裝數量 | 運送包裝 25 | TUBE |
TPS50601-SP 的特色
- 5962R10221:
- Radiation Hardness Assurance (RHA) up to TID 100 krad (Si)
- ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s
- Single Event Latchup (SEL) Immune to
LET = 85 MeV-cm2/mg (See Radiation Report, http://www.ti.com/radiation) - SEB and SEGR Immune to 85 MeV-cm2/mg, SOA Curve Available (See Radiation Report)
- SET/SEFI Cross-Section Plot Available (See Radiation Report)
- Peak Efficiency: 95% (VO = 3.3 V)
- Integrated 55-mΩ/50-mΩ MOSFETs
- Split Power Rail: 1.6 to 6.3 V on PVIN
- Power Rail: 3 to 6.3 V on VIN
- 6-A Maximum Output Current
- Flexible Switching Frequency
Options:
- 100-kHz to 1-MHz Adjustable Internal Oscillator
- External Sync Capability: 100 kHz to 1 MHz
- Sync Pin can be Configured as a 500-kHz Output for Master/Slave Applications
- 0.795-V ±1.258% Voltage Reference at 25°C
- Monotonic Start-Up into Prebiased Outputs
- Adjustable Soft Start Through External Capacitor
- Input Enable and Power-Good Output for Power Sequencing
- Power Good Output Monitor for Undervoltage and Overvoltage
- Adjustable Input Undervoltage Lockout (UVLO)
- 20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH)
- See www.ti.com/swift for SWIFT Documentation
- See the Tools & Software Tab
TPS50601-SP 的說明
The TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.