LM5113LLPEVB

LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module

LM5113LLPEVB

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Overview

The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the buck switch and the synchronous switch.

Features

Contents:

  • Assembled LM5113 Evaluation Board
  • LM5113 Application Note 2149
Half-bridge drivers
LM5113-Q1 Automotive 1.2-A/5-A, 100-V half bridge gate driver for GaNFET

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Evaluation board

LM5113LLPEVB/NOPB – LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module

TI's Standard Terms and Conditions for Evaluation Items apply.

Design files

LM5113LLPEVB Design Files SNVC213.ZIP (703 KB)

Technical documentation

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Type Title Date
* User guide AN-2149 LM5113 Evaluation Board (Rev. A) May 03, 2013
More literature LM5113LLPEVB/NOPB EU Declaration of Conformity (DoC) Jan. 02, 2019
Data sheet LM5113-Q1 Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. B) Mar. 12, 2018
Data sheet LM5113-Q1 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FE datasheet Mar. 19, 2017

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