LMG1210 Half-bridge Open Loop Evaluation Module
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Key Document


The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.

  • Demonstrates high frequency capability of driver
  • Demonstrates high CMTI withstand of the driver
  • Demonstrates the excellent propagation and matching and strength of the driver
  • Demonstrates the dead-time block functionaliy and the positive impact on efficiency
  • This is a PCB (hardware), which is orderable and demonstrates the driver stage for a laser to be used in classD audio, Envelope Tracking and high-frequency DCDC applications.

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LMG1210 Half-bridge Open Loop Evaluation Module


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Technical Documents
Datasheet (1)
Title Type Size (KB) Date
PDF 1582 07 Feb 2019
User guides (1)
Title Type Size (KB) Date
PDF 1415 29 Jan 2018
Design files (1)
Title Type Size (KB) Date
ZIP 3265 08 Apr 2019
More literature (1)
Title Type Size (KB) Date
PDF 38 02 Jan 2019

TI Devices (1)

Part Number Name Product Family
LMG1210  200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time  Gate drivers 

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