is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver
designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime
capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system
efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V
regardless of supply voltage.
To enable best performance in a variety of applications, the LMG1210 allows the designer
to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal
switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side
bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic
capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching
The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode.
In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two
complementary output signals are generated from a single input and the user can adjust the dead
time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C
to 125°C and is offered in a low-inductance WQFN package.