LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card


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LMG3425EVM-041 configures two LMG3425R050 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes
Gallium nitride (GaN) power stages
LMG3425R050 600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
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Evaluating LMG3425R050 GaN FET power stage

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Daughter card

LMG3425EVM-041 — LMG3425R050 600-V 50-mΩ with ideal diode mode half-bridge daughter card

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Technical documentation

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Type Title Date
* User guide LMG342XEVM-04X User Guide (Rev. B) PDF | HTML 30 Jan 2022
Certificate LMG3425EVM-041 EU Declaration of Conformity (DoC) 26 Oct 2020

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