TIDA-010014

Low Voltage IR LED Driver Reference Design for Photoelectric Measurement Subsystems

TIDA-010014

Design files

Overview

This reference design provides a design example for an IR LED driver for photoelectric measurement subsystems.  The subsystem described includes a voltage-to-current converter based on an operational amplifier (op amp) and a MOSFET transistor for the active pass device to form the basis of an accurate and programmable current sink function.  The use of the MOSFET transistor in this circuit allows several advantages which will be described and, most importantly, the opportunity to provide good current regulation in low-voltage, battery-powered systems.  Similarly, the high input impedance and the high open loop gain of the op amp in feedback allows the circuit to achieve a flat response over temperature and minimal variation in output current due to changes in supply voltage.

Features
  • Low voltage operation for 3V battery application
  • Fast enable time with minimal overshoot for minimizing LED "On" time
  • Low "Off" state supply current
  • Wide and linear output current adjustment range
  • Small footprint

A fully assembled board has been developed for testing and performance validation only, and is not available for sale.

Design files & products

Design files

Download ready-to-use system files to speed your design process.

TIDUEB7.PDF (674 K)

Reference design overview and verified performance test data

TIDRWX8.PDF (20 K)

Detailed schematic diagram for design layout and components

TIDRWX9.PDF (95 K)

Complete listing of design components, reference designators, and manufacturers/part numbers

Products

Includes TI products in the design and potential alternatives.

General-purpose op amps

TLV9002Dual, 5.5-V, 1-MHz, RRIO operational amplifier for cost-optimized applications

Data sheet document-pdfAcrobat PDF open-in-new HTML
General-purpose op amps

TLV9062Dual, 5.5-V, 10-MHz operational amplifier

Data sheet document-pdfAcrobat PDF open-in-new HTML
N-channel MOSFETs

CSD17483F430-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6 mm, 260 mOhm, gate ESD protection

Data sheet document-pdfAcrobat PDF open-in-new HTML

Technical documentation

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Type Title Date
* Design guide Low Voltage IR LED Driver Ref Design for Photoelectric Measurement Subsystems Aug. 17, 2018

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