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GaN: Enabling the highest power density in EV/HEV on-board charging

00:01:10 | 06 NOV 2020

Achieve extended battery range, increased system reliability and lower design cost with the fully integrated automotive GaN FETs, reducing the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions. The integration of the FET and gate driver enables a switching speed of greater than 150 V/ns, lowering losses by 66% over discrete GaN FETs.

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