GaN and other wide bandgap technologies offer  switching losses 60-80 percent lower than traditional silicon solutions. GaN uniquely allows higher operational frequencies (500kHz+ for 5kW+ designs) to  minimize magnetics and increase power density. This presentation will review the benefits of GaN for automotive designs as well as TI's LMG352xR030-Q1 GaN FET with an integrated driver to minimize loss while integrating power management features for simplified design.