LMG3522R030-Q1

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Product details

VDS (Max) (V) 650 RDS (on) (Milliohm) 30 ID (Max) (A) 55 Rating Automotive
VDS (Max) (V) 650 RDS (on) (Milliohm) 30 ID (Max) (A) 55 Rating Automotive
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40 °C To +125 °C, TJ
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 650-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40 °C To +125 °C, TJ
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 650-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

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Technical documentation

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Type Title Date
* Data sheet LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) PDF | HTML 10 Jun 2021
Technical article Managing thermals: 3 ways to break through power-density barriers 16 Oct 2022
Technical article Is GaN reliable, or is that the right question? 21 Apr 2022
Technical article Increasing power density with an integrated GaN solution 14 Mar 2022
More literature AEC-Q100 GaN: Future for on-board charging and high-voltage DC/DC 15 Dec 2021
More literature Optimizing GaN-Based High-Voltage, High-Power Designs PDF | HTML 07 Dec 2021
More literature Optimizing GaN-based high-voltage, high-power designs PPT 02 Dec 2021
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML 02 Jun 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 18 Mar 2021
Application note Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package 05 Mar 2021
EVM User's guide LMG352XEVM-04X EVM User's Guide (Rev. A) 03 Feb 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Technical article Automotive GaN FETs engineered for high frequency and robustness in HEV/EVs 30 Nov 2020
Analog Design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x Family

The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM (...)
User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

User guide: PDF
Not available on TI.com
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23069 — 3-kW, 180-W/in3 single-phase totem-pole bridgeless PFC reference design with 16-A max input

This reference design is a GaN-based 3-kW single-phase continuous conduction mode (CCM) totem-pole power factor correction (PFC) converter targeting maximum power density. The supply is designed to support max input current of 16-A RMS and peak power of 3.6 kW. The power stage is followed by a (...)
Test report: PDF
Reference designs

TIDM-02013 — 7.4-kW on-board charger reference design with CCM totem pole PFC and CLLLC DC/DC using C2000™ MCU

TIDM-02013 is a bidirectional onboard charger reference design. The design consists of an interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power-factor correction (PFC) power stage followed by a CLLLC DCDC power stage all controlled using a single C2000™ real-time (...)
Design guide: PDF
Reference designs

PMP40988 — Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design

This reference design is a high-density and high-efficiency 5-kW totem-pole power factor correction (PFC) design. The design uses a two-phase totem-pole PFC operating with variable frequency and zero voltage switching (ZVS). The control uses a new topology and improved triangular current mode (...)
Test report: PDF
Reference designs

PMP23126 — 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density

This reference design is a GaN-based 3-kW phase-shifted full bridge (PSFB) targeting maximum power density. The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). (...)
Test report: PDF
Reference designs

PMP22650 — GaN-based, 6.6-kW, bidirectional, onboard charger reference design

The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)
Test report: PDF
Schematic: PDF
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