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LMG3522R030-Q1

ACTIVE

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

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Data sheet

LMG3522R030-Q1

ACTIVE
Data sheet Order now

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Automotive Operating temperature range (°C) -40 to 150
VDS (max) (V) 650 RDS(on) (mΩ) 30 ID (max) (A) 55 Features Cycle-by-cycle overcurrent protection, Latched overcurrent protection, Overtemperature protection, PWM temperature reporting, Top-side cooled Rating Automotive Operating temperature range (°C) -40 to 150
VQFN (RQS) 52 144 mm² (12 mm × 12 mm)
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to +125°C, TA
    • Junction temperature: –40°C to +150°C, TJ
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40°C to +125°C, TA
    • Junction temperature: –40°C to +150°C, TJ
  • 650V GaN-on-Si FET with integrated gate driver
    • Integrated high precision gate bias voltage
    • 200V/ns FET hold-off
    • 2MHz switching frequency
    • 20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from 7.5V to 18V supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100ns response
    • Withstands 720V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
  • Top-side cooled 12mm × 12mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

The LMG3522R030-Q1 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG3522R030-Q1 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet LMG3522R030-Q1 650 V 30 mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. D) PDF | HTML Feb 2, 2024
Product overview HVDC QFN-Packaged GaN Power Devices PDF | HTML Mar 31, 2026
Technical article How isolated bias transformer parasitic capacitance impacts EMI performance PDF | HTML Sep 22, 2025
Technical article Managing thermals: 3 ways to break through power-density barriers PDF | HTML Oct 16, 2022
Technical article Is GaN reliable, or is that the right question? PDF | HTML Apr 21, 2022
Technical article Increasing power density with an integrated GaN solution PDF | HTML Mar 14, 2022
More literature AEC-Q100 GaN: Future for on-board charging and high-voltage DC/DC Dec 15, 2021
More literature Optimizing GaN-Based High-Voltage, High-Power Designs PDF | HTML Dec 7, 2021
More literature Optimizing GaN-based high-voltage, high-power designs PPT Dec 2, 2021
White paper Achieving GaN Products With Lifetime Reliability PDF | HTML Jun 2, 2021
Application note Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package Mar 5, 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs Jan 5, 2021
Technical article Automotive GaN FETs engineered for high frequency and robustness in HEV/EVs PDF | HTML Nov 30, 2020
Analog design Journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC Sep 22, 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x evaluation module

The LMG342X-BB-EVM is an easy-to-use breakout board to configure any LMG342xR0x0 half-bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry, this evaluation module (EVM) allows for quick measurements of the gallium (...)

User guide: PDF | HTML
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Daughter card

LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card

LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

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Simulation model

LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model

SNOM768.ZIP (340 KB) - PLECS model
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Simulation model

LMG3522R030 PSpice Model

SNOM770.ZIP (644 KB) - PSpice model
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Calculation tool

LMGXX-GAN-LLC-CALC — GaN LLC resonant converter device loss calculator

Device Loss Calculator can be used to evaluate different devices for different topologies of the LLC Resonant Converter
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Calculation tool

SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet

Supported products & hardware
Calculation tool

SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet

Supported products & hardware
Reference design

PMP22650 — GaN-based, 6.6-kW, bidirectional, onboard charger reference design

The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)
Supported products & hardware
Reference design

TIDA-010236 — 4-kW GaN totem-pole PFC reference design for appliances

This reference design is a 4-kW continuous conduction mode (CCM) totem-pole power factor correction (PFC) with a top-cooled gallium nitride (GaN) daughterboard and TMS320F280025C digital controller. Along with the integrated protection features of LMG352x and C2000, full protections are (...)
Supported products & hardware
Reference design

TIDM-02013 — 7.4-kW on-board charger reference design with CCM totem pole PFC and CLLLC DC/DC using C2000™ MCU

TIDM-02013 is a bidirectional onboard charger reference design. The design consists of an interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power-factor correction (PFC) power stage followed by a CLLLC DCDC power stage all controlled using a single C2000™ real-time (...)

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Package Pins CAD symbols, footprints & 3D models
VQFN (RQS) 52 Ultra Librarian
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