History of Innovation - Semiconductor

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			Semiconductor
			1952 • TI buys Western Electric transistor license; enters semiconductor realm 1953 • SC Products division established 1954 • TI introduces first commercial silicon transistor • First germanium high-frequency transistors produced • Regency Radio debuts, first commercial mass-produced transistor product 1956 • Grown-diffused transistors developed 1957 • First silicon high-power transistors produced • First SC distributor sales program launched 1958 • Integrated circuit invented by Jack Kilby • Explorer, first U.S. orbiting satellite, contains TI transistors • Diffused-base transistor process developed • Centralized Automatic Tester (CAT) transistor-testing machine produced 1959 • First commercial integrated circuit – Solid Circuits™ – produced • First Gallium Arsenide (GaAs) solar cells produced Back to top
			1961 • Series 51 ICs produced, first digital logic IC family • Epitaxial and Planar SC manufacturing processes implemented • Special SC devices produced for Polaris missile 1962 • Series 52 ICs produced, linear circuits IC family 1964 • First plastic packaging of integrated circuits • TI-Kote™ silicon carbide coating developed • Series 54/74 Transistor-Transistor-Logic (TTL) ICs introduced • Zenith demonstrates hearing aid, first use of TI IC in consumer device 1967 • Manufacturing transitions from 1.25” to 2.0” wafers • TI533 IC tester put into operation • TIVICON camera tube developed • Discretionary wiring large-scale integration process developed 1968 • TI’s first Metal-On-Silicon (MOS) circuits produced • ECL integrated circuits produced • Single-diffused SC process developed 1969 • Thermocompression bonding process developed • Large Scale Integration (LSI) designs introduced • Memory arrays developed • APOLLO Lunar Exploration Module contains TI components Back to top
			1971 • Single-chip microprocessor invented • Single-chip “calculator on chip” invented (later called microcontroller) • Series 54/74H ICs – high-power TTL logic family – produced • Series 54/74L ICs – low-power TTL logic family – produced • Series 54/74LS ICs – low-power Schottky logic family – produced • Series 54S Schottky logic family of ICs produced 1972 • ABACUS II integrated circuit wire bonder developed 1973 • 4K dynamic random access memory (DRAM) IC developed 1974 • TMS1000 single-chip microcomputer (microcontroller) released 1975 • TMS9900 16-bit microprocessor chip released • First Integrated Injection Logic (I²L) put into use • First single-transistor memory cell produced • E-Beam lithography program launched • First Programmable Logic Array developed 1976 • First applications libraries for microprocessors developed 1977 • 16K dynamic random access memory (DRAM) chip released • Production begins of magnetic bubble memory chips • 16K electrically-programmed read-only memory (EPROM) chip released • 4K static random access memory (SRAM) chip released • DARPA job yields metallic membrane, Digital Micromirror Device precursor 1978 • Single-chip speech synthesizer debuts in TI Speak & Spell™ • 256K bubble memory chips produced • 64K 5 volt-only DRAM chip released • 16K static random access memory (SRAM) chip produced • 32K EPROM chip released • Etched leadframe IDEA technology developed 1979 • Production begins of 64K dynamic random access memory (DRAM) chip • Series 54/74AS ICs – Advanced Schottky logic family – produced • Series 54ALS ICs – Advanced low-power Schottky logic family – produced • Microcomputer/module business launched • Solar Energy technology developed Back to top
			1980 • Gate array business launched • First Sonar autofocus technology developed with Polaroid 1981 • TMS7000 8-bit microprocessor chip announced • 64K dynamic random access memory (DRAM) chip enters full production • Charge-coupled device imagers (CCDs) delivered for space telescope • First 128 x 128 digital micromirror device (DMD) developed 1982 • Single-chip digital signal processor (DSP) announced • Charge-coupled device imagers (CCDs) delivered for Galileo Mission 1984 • Manufacturing transitions to 6” wafers • Complementary metal-on-silicon (CMOS) gate arrays developed with Fujitsu • First business secured for programmable logic array technology • 32000-series microprocessor chip developed with National Semiconductor • Standard cell semi-custom ICs developed • First Multiport video RAM chip produced • First DMD (digital micromirror device)-based printer produced 1985 • Production begins of 256K dynamic random-access memory (DRAM) chips • Chips developed using 4MB DRAM trench cell • List Processing (LISP) chip developed for AI applications 1986 • First 32-bit graphics DSP developed • 1-micron complementary (CMOS) gate arrays developed • Production begins of 1MB DRAM chips • Series 74HC ICs – CMOS logic family – produced 1988 • First 4MB dynamic random-access memory (DRAM) devices sampled • TI and Hitachi sign 16MB DRAM joint development agreement • First hybrid silicon and gallium arsenide IC demonstrated • Fabrication of first quantum-effect transistor announced • First digital DMD produced 1989 • Microelectronics Manufacturing Science Technology (MMST) contract won Back to top
			1990 • 64MB dynamic random-access memory (DRAM) designed and demonstrated • 4MB DRAM production enters ramp-up phase • 16MB DRAM sampled • BiCMOS technology developed • Manufacturing transitions to 8” wafers • Room-temperature resonant-tunneling transistor developed • Silicon-based monolithic digital micromirror device fabricated 1991 • 4MB DRAM chip enters volume production • SuperSPARC™ reduced-instruction set computing (RISC) chip produced • First light-emitting diode (LED) CMOS and GaAs chip demonstrated 1992 • TI 486 microprocessor chip released • MicroSPARC™ single-chip processor introduced • First large-screen color DMD projector demonstrated 1993 • Three-day IC manufacturing process demonstrated as part of MMST contract • TI and Hitachi announce agreement for joint development of 256MB DRAM • First room-temperature quantum-effect IC demonstrated • First high-resolution DMD projection demonstrated 1994 • Multimedia video processor chip introduced with DSP-RISC architectures • TI, Hitachi announce TwinStar JV for advanced chip manufacturing • 1394 serial bus wins “Most Significant Technology” award at Fall COMDEX 1995 • Micro-dominant business units deployed • TMS320C54x™ DSP chip family launched • Dr. Hornbeck, DMD™ inventor, receives Eduard Rhein Award 1996 • First chip scale package, MicroStar Ball Grid Array, completed 1997 • TMS320C6x, first VLIW DSP, introduced with 1 GFLOPS performance • Kilby Center dedicated, new $150 million R&D facility • TI inventors Hornbeck, Nelson receive Rank Prize Funds award for DMD™ • First 56-Kbit modem from 3COM uses TI DSP solution • ANAM foundry operation begins production using ‘C10 technology • Power Trends subsidiary supplies electronics for Mars Pathfinder mission 1998 • SC business establishes six new vertical business units • World’s highest performance floating-point DSP, TMS320C6701, introduced • DLP™ technology and inventor Larry Hornbeck receive Emmy awards • Bond-Over-Active Circuits and Bond-Over-ESD technology introduced 1999 • Two more vertical business units established • eXpressDSP™ Realtime Software technology released • First DSP-based printer solution – xStream DSP technology – introduced • First DSP-optimized analog-to-digital converter, THS1206, introduced • DSP-based solution provides secure downloading to portable devices • Nokia, Ericsson select Open Multimedia Application Platform (OMAP™) • “Star Wars: Phantom Menace” premiers in DLP Cinema™ • Hitachi & TI joint agreement announced to develop HDTV • Disney’s “Tarzan” is first movie without film-to-digital transfer Back to top
			2000 • DMOS5 wafer factory converted to 200mm wafers • TMS320C64x™ core breaks records as world’s fastest DSP • TMS320C55x™ DSP core announced • ADSL set-top box demonstrated at NAB 2000 by Philips and TI • Shipments of DLP™ subsystems up over 250% from 1999 2001 • Palm Computer uses TI Portable Power Management devices • First 300mm full flow silicon manufacturing begins • Sun-UltraSPARC III - Copper process launched 2002 • 90-nanometer CMOS process announced • First single-chip Bluetooth® device made with TI digital RF architecture • 130-nanometer technology qualified for production on 300mm wafers • BiCOMIII introduced, first SiGe process with NPN and PNP transistors • First 64-megabit ferroelectric RAM (FRAM) test chip produced 2003 • High-performance 14-bit, 124-MSPS analog-to-digital converter announced • First 90-nanometer samples delivered - phone call on 90nm silicon • First single-chip ADSL integrating 12-volt line driver announced • Cisco Supplier of the Year award honors TI ASIC business • 15th anniversary of TI-Sun Microsystems relationship celebrated • Single electron transistor research presented • First CDMA chipset announced • WANDA announced, a PDA design integrating three wireless technologies 2004 • First single-chip cell phone device shipped • Strained silicon process announced, increases electron and hole mobility • 65-nanometer CMOS process announced • 1GHz DSP announced, the first and fastest in the industry • OMAP™ 2 architecture announced • Capability for TV broadcast on cell phones announced • DLP™ TVs outsell plasma in North America for large-screen TVs • 90-nanometer technology qualified for production on 300mm wafers Back to top

		Semiconductor
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